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Vertical structure LED chip with double-sided transparent electrodes and preparation method of vertical structure LED chip

A technology of LED chips and transparent electrodes, which is applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor current expansion and unstable voltage, and achieve the effects of poor current expansion, stable product voltage, and reduced heat generation

Inactive Publication Date: 2020-07-14
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention proposes a vertical structure LED chip with double-sided transparent electrodes and its preparation method, which can solve the technical problems of voltage instability and poor current expansion in traditional vertical structure LED chips

Method used

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  • Vertical structure LED chip with double-sided transparent electrodes and preparation method of vertical structure LED chip
  • Vertical structure LED chip with double-sided transparent electrodes and preparation method of vertical structure LED chip
  • Vertical structure LED chip with double-sided transparent electrodes and preparation method of vertical structure LED chip

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preparation example Construction

[0050] A method for preparing a vertical structure LED chip with double-sided transparent electrodes, said method comprising the following steps:

[0051] Step S1, using MOCVD to grow epitaxial layer 6 on silicon, sapphire, SiC and other substrates to form LED epitaxial wafers;

[0052] Step S2, growing a p-plane transparent electrode 5 on the LED epitaxial wafer by using CVD or PVD or vapor deposition or spin coating;

[0053] Step S3, using electron beam evaporation or PVD to cover the entire surface of the p-side transparent electrode 5 and the epitaxial layer 6 with the reflective metal layer 4;

[0054] Step S4, using electron beam evaporation or PVD method to cover the entire surface of the reflective metal layer 4 with the protective metal layer 3 and the bonding metal layer 2;

[0055] Step S5, making a bonding metal layer on the supporting conductive substrate 1 by means of electron beam evaporation or PVD;

[0056] Step S6, bonding the samples obtained in step S4 a...

Embodiment 1

[0064] (1) Using MOCVD epitaxial technology to grow LED epitaxial wafers with 2um-8um epitaxial layers on Si substrates;

[0065] (2) Use acetone and isopropanol for organic cleaning for 5 minutes to remove organic dirt;

[0066] (3) Use SPM solution for pickling to remove inorganic metal dirt and organic dirt;

[0067] (4) Rinse and dry, and use CVD equipment to grow 200nm graphene at 300 degrees;

[0068] (5) Al metal 200nm is deposited on the entire surface by electron beam evaporation.

[0069] (6) Electron beam evaporation TiPtTiPt (Ti20nm-200nm, Pt20nm-300nm) protective layer and NiSn (Ni100nm-800nm, Sn100nm-2000nm) bonding metal layer

[0070] (7) Using an electron beam evaporation process, a NiSn (Ni100nm-800nm, Sn100nm-2000nm) bonded metal layer is evaporated on the Si substrate with high conductivity.

[0071] (8) The finished samples of (10) and (11) are bonded by a bonder, and the silicon substrate is removed by grinding and chemical etching.

[0072] (9) Use h...

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Abstract

The invention discloses a vertical structure LED chip with double-sided transparent electrodes and a preparation method of the vertical structure LED chip. The LED chip structurally sequentially comprises a supporting conductive substrate, a bonding metal layer, a protective metal layer, a reflecting metal layer, a p-surface transparent electrode, an epitaxial layer, a passivation insulating layerand an n-surface transparent electrode from bottom to top; the passivation insulating layer is arranged on the periphery of the epitaxial layer; a first groove is formed by the passivation insulatinglayer and the top of the epitaxial layer; a protrusion matched with the first groove is arranged at the bottom of the n-surface transparent electrode; because a transparent electrode is adopted as the p-surface electrode, stable ohmic contact can be realized, product voltage is stable, light transmission performance is good, and the problem of the unstable voltage of thae traditional vertical structure LED chip is solved; a transparent electrode is adopted as the n-surface electrode, and therefore, current expansion can be greatly improved, the problems of light absorption and light blockingof the n-surface electrode are avoided, brightness is further improved, heating under high current is reduced, a lighting effect is improved, and the problem of the poor current expansion of the traditional vertical structure LED chip is solved.

Description

technical field [0001] The invention relates to the technical field of LED chip manufacturing, in particular to a vertical structure LED chip with double-sided transparent electrodes and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED) is a device that converts electrical energy into light energy by PN junction. It has the advantages of good controllability, fast start-up, long life, high luminous efficiency, safety, energy saving and environmental protection, etc. The profound changes in the industry, while also leading the innovation in the display field. [0003] With the development of the LED industry, high-power LEDs are increasingly favored by people. In high-power LEDs, vertical structure LED chips are favored by various markets because of their ability to pass large currents and good light output directions. Major LED chip factories , and also developed its own vertical structure LED chip technology, however, the current vertic...

Claims

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Application Information

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IPC IPC(8): H01L33/42H01L33/00
CPCH01L33/005H01L33/42H01L2933/0016
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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