Surface treatment method for stripping single crystal thin film through ion implantation
A single crystal thin film and ion implantation technology, which is applied in cleaning methods and appliances, chemical instruments and methods, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve problems such as changes in wettability of thin films, and achieve single crystal quality The effect of improving and simplifying complexity and reducing secondary damage
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[0024] The surface treatment method of the ion implantation peeling single crystal thin film of the present embodiment comprises the following steps:
[0025] Such as figure 1 As shown, the single crystal piezoelectric thin film prepared by ion implantation stripping technology is processed, and the single crystal thin film includes a surface damage layer 4, a single crystal thin film layer 3, a bonding layer 2, and a substrate 1 from top to bottom;
[0026] Step 1. For the monocrystalline piezoelectric thin film prepared by ion implantation stripping technology, the surface damaged layer is accurately removed by argon ion etching method.
[0027] The single crystal film prepared by ion implantation stripping technology is placed in the working chamber of the ion source, the thickness of the surface damage layer is 100nm-130nm, the beam voltage is set to 200V-500V, the beam current is 4mA-30mA, and the accelerating voltage is 40V-100V; the thickness range of the surface damag...
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