Treatment method for removing an oxide film of an electrode and etching the electrode

Abstract

The invention relates to a treatment method for removing an oxide film of an electrode and etching the electrode using plasma and gas, and more specifically, to a process including removing the oxidefilm formed on the electrode from the electrode formed with a channel, and a treatment method for removing the oxide film of the electrode and etching the electrode in the step of performing an etching process on the electrode from which the oxide film is removed.

Description

technical field [0001] The invention relates to a method for removing an oxide film formed on an electrode by using plasma and gas, and treating the damaged part of the electrode through an etching process. Background technique [0002] Integrated circuits are manufactured by processes that form intricately patterned layers of substances on the surface of a substrate. In order to form a patterned substance on a substrate, a controlled process of removing the substance is required. Such a process includes a wet etching method using a chemical reaction (solution), a dry etching method using a chemical reaction (gas), and the like. [0003] On the other hand, wet etching includes transferring a photoresist pattern to a layer provided underneath, thinning a layer, or thinning the lateral dimension of a feature already present on the surface, and thus serves various purposes. [0004] However, wet etching has major problems in that the aspect ratio of the minute pattern increas...

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Problems solved by technology

[0004] However, wet etching has major problems such as the fact that the aspect ratio of the minute pattern increases and the surface cannot be etched uniformly, and the pattern collapses.

[0006] However, there is a problem in performing the plasma etching process that the plasma energy roughens the surface while etching the substrate, or creates defects due to adsorption or penetration of plasma-activated elements to the substrate surface

[0007] In addition, in the case where an etching process is used for a structure having a high aspect ratio by a plasma process, there is a problem that, for example, in the trench process for opening the gate electrode, the plasma process is damaged due to the gas used when the plasma process is performed. Oxidation of the electrode, thereby degrading the performance of the component

[0008] As a prior document related to this, Korean Registered Patent No. 10-0525119 (publication date: 2001.05.15.) discloses a method for forming a gate electrode, and discloses a process for removing an oxide film formed on tungsten. A heat treatment process in a hydrogen environment, but there is a problem that it cannot be applied to channels, trenches and holes with high aspect ratios

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