Method of measuring impurity activation energy in semiconductor

Abstract

The embodiment of the invention relates to a semiconductor material analysis and detection technology, discloses a method for measuring activation energy of impurities in a semiconductor, and expandsapplication occasions of a time-resolved fluorescence spectrum. The method comprises the following steps of impurities in the semiconductor participating in fluorescence radiation composite luminescence; obtaining the wavelength and the half-peak width of an impurity luminescence peak; determining a band-pass filter, determining laser excitation intensity, determining fluorescence intensity attenuation curves of corresponding light-emitting peaks at different temperatures, and recording the maximum fluorescence intensity obtained by the detector at the moment t=0; drawing an Arrhenius curve according to the fluorescence maximum intensity and the reciprocal of the temperature measured by the detector at different temperatures, carrying out linear fitting to obtain a slope, and multiplying the slope by a Boltzmann constant to obtain the activation energy of the impurities. The method is advantaged in that the temperature-dependent carrier lifetime information can be obtained by using thevariable-temperature time-resolved fluorescence spectrum, the activation energy of an impurity introduction energy level can be obtained, the method is simple, convenient and easy to operate, experiment cost is greatly reduced, and operation efficiency is greatly improved.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of analysis and detection of semiconductor materials, and in particular to a method for measuring the activation energy of impurities in semiconductors. Background technique [0002] The impurity activation energy (or ionization energy) in semiconductor is an important conductance physical parameter of doped semiconductor, which is crucial to the performance of semiconductor materials and devices. [0003] There are usually two methods of obtaining the activation energy of impurities in semiconductors: electrical and optical. (1) Electricity test For example, the activation energy of impurities in semiconductors can be measured by temperature-variable Hall experiments. However, the inventors have found that this method requires relatively high conductivity of materials, and electrodes need to be fabricated. The obtained experimental results are often subject to various influences. ...

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Problems solved by technology

(1) Electricity test For example, the activation energy of impurities in semiconductors can be measured by variable temperature Hall experiment. However, the inventors have found that this method requires relatively high conductivity of materials, and electrodes need to be made. The obtained experimental results are often subject to various influences. Influenced by factors, the error is relatively large

Deep level transient spectroscopy can also measure the activation energy of impurities introduced into the deep level in semiconductors, but it needs to make Schottky junction or pn junction devices, which is costly and complicated to test

(2) The optical method can generally obtain the activation energy of impurities in semiconductors through the photoluminescent luminescence spectrum testing technology of variable temperature; however, the inventor finds that this method needs to record the PL photoluminescent luminescence spectrum figure of each temperature, and for each The corresponding luminescence peaks in the spectrum are calculated by area integration, and finally calculated by the Arrhenius formula. The whole process requires a long time and a large amount of calculation.

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