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Preparation method for MoS2/WS2 vertical heterojunction

A heterojunction, mass ratio technology, applied in gaseous chemical plating, electrolytic coatings, surface reaction electrolytic coatings, etc., can solve the problems of easy formation of alloys, poor controllability, and low vertical heterojunction yield, etc. Ease of molybdenum-sulfur ratio, control of molybdenum-sulfur ratio, avoidance of atomic substitution and effects of thermal decomposition

Active Publication Date: 2020-06-30
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the prepared WS 2 / MoS 2 Vertical heterojunction has low yield, poor controllability, and easy alloy formation

Method used

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  • Preparation method for MoS2/WS2 vertical heterojunction
  • Preparation method for MoS2/WS2 vertical heterojunction
  • Preparation method for MoS2/WS2 vertical heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) SiO 2 Preparation of tungsten disulfide on Si substrate

[0028] with WO 3(0.05g) powder and S powder (0.2g) are the precursors, first the cut 1cm*2cm SiO 2 / Si substrates were ultrasonically cleaned in acetone and isopropanol solutions for 10 min in sequence and then cleaned with N 2 Blow dry, put a certain amount of WO 3 The powder is placed in a ceramic boat, and the SiO 2 / Si substrate is placed upside down on the ceramic boat and placed in the high temperature zone of the tube furnace, and the quartz boat with sulfur powder is placed in the low temperature zone of the tube furnace, so that the distance between the two is 36cm, and the pressure in the quartz tube is reduced by a vacuum pump. After evacuating to 0.1 Pa, the quartz tube was injected with 500 sccm of argon gas for cleaning, repeated 4 times, and the flow rate of Ar gas was set to 30 sccm after flushing. Heating the tube furnace, raising the temperature to 800°C and keeping it warm for 5 minute...

Embodiment 2

[0033] (1) SiO 2 Preparation of tungsten disulfide on Si substrate

[0034] with WO 3 (0.05g) powder and S (0.2g) powder are the precursors, first the cut 1cm*2cm SiO 2 / Si substrates were ultrasonically cleaned for 15 min in acetone and isopropanol solutions sequentially and then cleaned with N 2 Blow dry, put a certain amount of WO 3 The powder is placed in a ceramic boat, and the SiO 2 The / Si substrate is placed upside down on the ceramic boat and placed in the high temperature zone of the tube furnace, and the quartz boat filled with sulfur powder is placed in the low temperature zone of the tube furnace, so that the distance between the two is 36cm, and the pressure in the quartz tube is reduced by a vacuum pump. After evacuating to 0.1 Pa, pass 500 sccm of argon gas into the quartz tube for cleaning, repeat 5 times, and set the flow rate of Ar gas to 50 sccm after flushing. Heating the tube furnace, raising the temperature to 825°C and keeping it warm for 10 minute...

Embodiment 3

[0038] (1) SiO 2 Preparation of tungsten disulfide on Si substrate

[0039] with WO 3 (0.05g) powder and S (0.2g) powder are the precursors, first the cut 1cm*2cm SiO 2 / Si substrates were ultrasonically cleaned in acetone and isopropanol solutions for 10 min in sequence and then cleaned with N 2 Blow dry, put a certain amount of WO 3 The powder is placed in a ceramic boat, and the SiO 2 The / Si substrate is placed upside down on the ceramic boat and placed in the high temperature zone of the tube furnace, and the quartz boat filled with sulfur powder is placed in the low temperature zone of the tube furnace, so that the distance between the two is 36cm, and the pressure in the quartz tube is reduced by a vacuum pump. After evacuating to 0.1 Pa, the quartz tube was injected with 500 sccm of argon gas for cleaning, repeated 6 times, and the flow rate of Ar gas was set to 60 sccm after flushing. Heating the tube furnace, raising the temperature to 850°C and keeping it warm ...

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Abstract

The invention discloses a preparation method for a MoS2 / WS2 vertical heterojunction. The preparation method comprises the following steps that WO3 and powdered sulfur are used as precursors, large-size high-quality single-layer tungsten disulfide is prepared on a SiO2 / Si substrate, a multivalent molybdenum oxide foil (MoOx) is prepared by using an electrochemical anodic oxidation method of Mo foil, and under the conditions of low pressure and low temperature, molybdenum disulfide grows on the surface of the tungsten disulfide by using the molybdenum oxide foil and the powdered sulfur as the precursors, so that the MoS2 / WS2 vertical heterojunction is prepared. The method is high in controllability and repeatability and has great significance in preparation of other transition metal sulfideheterojunctions.

Description

technical field [0001] The present invention relates to a kind of MoS 2 / WS 2 Fabrication method of vertical heterojunction. Background technique [0002] MoS 2 / WS 2 As an important class of two-dimensional material heterojunctions, with tunable bandgap and optoelectronic properties, it has potential application prospects in the next generation of high-performance optoelectronic devices, MoS 2 / WS 2 The preparation methods of heterojunction mainly include mechanical exfoliation method and CVD method. Mechanical exfoliation method can obtain high-quality single-layer two-dimensional materials, but its layer number and area are difficult to control, and defects and impurities are easily introduced during the transfer process. CVD The method has less restrictions on the substrate, the method is simple, and the obtained material is of high quality, but MoS 2 / WS 2 The controllable growth technology of heterojunction still faces many challenges. [0003] CN201811446332.7...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44C25D11/26
CPCC23C16/305C23C16/44C25D11/26
Inventor 曹阳宋维英
Owner XIAMEN UNIV
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