Disassembling-free cleaning device for MOCVD tail pipe

Abstract

The invention discloses a disassembling-free cleaning device for a MOCVD tail pipe. The disassembling-free cleaning device comprises a front-end cleaning assembly and a tail-end connecting assembly; the front-end cleaning assembly comprises a front-end cable; a cleaning device is fixedly arranged at the end of one side of the front-end cable, and the other end of the front-end cable is connected with the end of a tail-end cable; and the tail-end connecting assembly further comprises a moving device which is fixedly arranged on the peripheral side of the front end cable and used for enabling the whole device to move in the MOCVD tail pipe in the pipeline extending direction. According to the disassembling-free cleaning device for the MOCVD tail pipe, cleaning and maintaining device for thelong tail pipe type MOCVD tail pipe are completed in an electric rotary sweeping mode through a physical brush, the whole device can directly stretch into the MOCVD tail pipe, a pipeline does not needto be frequently detached during periodic maintenance, moreover, deflagration accidents caused by the fact that high-activity particles in the pipeline make contact with air are avoided, and therefore the maintenance safety is improved.

Description

technical field [0001] The invention relates to a cleaning device, in particular to a long tailpipe type MOCVD tailpipe disassembly-free cleaning device which can be used in the preparation process of gallium nitride epitaxial wafers, and belongs to the technical field of cleaning equipment. Background technique [0002] Gallium nitride (GaN, Gallium nitride) is a compound of nitrogen and gallium, a semiconductor with a direct bandgap, which belongs to the third generation of semiconductor materials, and is used in optoelectronics, high-temperature high-power devices and high-temperature microwave devices. Has a broad prospect. In recent years, the research and application of gallium nitride materials has become a hotspot and frontier in the field of global semiconductor research. [0003] At present, the industry mainly adopts metal organic chemical vapor deposition (MOCVD) for the preparation of gallium nitride materials in the industry. Various raw material gases are in...

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Problems solved by technology

Due to the high activity of the particles inside the tailpipe, direct contact with air can easily cause a deflagration accident. Therefore, the traditional method is to periodically disassemble, clean or even replace the MOCVD tailpipe. The entire maintenance process is time-consuming and laborious.

Since the length of the pipe flange joints usually reaches several meters, it is difficult to use strong volatile alkaline reagents such as ammonia water to clean metal MOCVD tailpipes, and a large amount of alkali is used in the traditional cleaning process Aqueous solution, in which the residues of moisture, oxygen and metal ions will also have a great impact on the crystal quality and doping process of subsequent gallium nitride products

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