Structure of thin-layer thermal resistance test probe and test method

Abstract

The invention discloses a structure of a thin-layer thermal resistance test probe and a test method, and belongs to the technical field of electrical and thermal tests of semiconductor materials and devices. The structure comprises a probe chip and a packaging structure, wherein the probe chip comprises a temperature probe formed by connecting a plurality of diodes in series and in parallel, a micro heater formed by doping polycrystalline silicon patterns, a lead electrode and a semiconductor substrate material; the packaging structure comprises a substrate used for fixing the probe chip and the extraction electrode, and a spring supporting structure used for moving the probe chip and applying pressure. The invention designs a thin-layer thermal resistance test probe structure composed ofa Si-based temperature measurement probe chip adopting a double-sided process. By adopting the structural design that the heating source and the measuring source are separated, the heating state and the measuring state can be carried out at the same time, switching delay does not exist, and non-switching type thermal resistance measurement can be carried out on a semiconductor chip and a thin-layer material.

Description

Technical field: [0001] The invention discloses a structure and a testing method of a thin-layer thermal resistance testing probe, belonging to the technical field of electrical and thermal measurement of semiconductor materials and devices. The structure includes: a chip structure and a packaging structure. Background technique: [0002] With the development of thermal resistance testing towards the microscopic field and refinement, the measurement of device-level thermal resistance can no longer meet the reliability research of some devices. The interface thermal resistance of different materials during the growth process and the body heat of the material itself Fine structure thermal resistance such as resistance has increasingly become the focus of attention. Compared with the bulk material, it has good compactness and integrity. The interface of heterogeneous materials is often subject to phenomena such as increased material defects and phonon mismatch due to lattice m...

AI Technical Summary

Problems solved by technology

However, due to the different electrical states of the semiconductor device between the heating stage and the measurement stage, there is often a microsecond-level switching delay time

This delay makes it impossible to extract the temperature information during this period, and the resulting thermal resistance structure is incomplete

Therefore, this switch-type measurement method is no longer suitable for thermal reliability analysis of fine structures.

However, optical measurement often requires huge and expensive optical equipment, and due to the limitations of materials and measurement principles, the measured samples often need to be specially prepared.

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