SiC MOSFET module full-life-cycle junction temperature online prediction method

A technology of whole life cycle and prediction method, applied in the field of online prediction of junction temperature in the whole life cycle of SiCMOSFET modules, can solve the problem of inaccurate junction temperature prediction results, achieve strong self-learning and self-adaptive ability, and overcome the effect of over-temperature protection

Pending Publication Date: 2020-06-09
XI'AN POLYTECHNIC UNIVERSITY
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Problems solved by technology

[0003] The purpose of the present invention is to provide an online prediction method for the junction temperature of a SiC MOSFET module in its entire life cycle, which solves the problem of inaccurate prediction results of the SiC MOSFET module junction temperature existing in the prior art

Method used

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  • SiC MOSFET module full-life-cycle junction temperature online prediction method
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  • SiC MOSFET module full-life-cycle junction temperature online prediction method

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Embodiment 1

[0031] Step 1. For the 1200V / 300A model BSM300D12P2E001 produced by Rohm, a brand-new SiC MOSFET module, perform a power cycle until the module is completely aging and fails; during the power cycle, the electrical parameters of the SiC MOSFET module are sampled as a data set, and the electrical parameters are respectively Vds, Id and R, where Vds is the saturation voltage drop, Id is the current value, and R is the resistance value;

[0032] The specific sampling method is:

[0033] The current value Id of the DC power supply is set, and the DC value is randomly selected within the range of [1,150]. The junction temperature starts from 30°C, and the electrical parameters are obtained by sampling at intervals. The sampling frequency is 2000 power cycles at the initial aging stage. In the later stage of aging, the power cycle is 1000 times, and the sampling data is divided into training group data and test group data according to 3:1; the training group is used as a data set, an...

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Abstract

The invention discloses a SiC MOSFET module full-life-cycle junction temperature online prediction method. The method is specifically implemented according to the following steps that 1, a brand-new SiC MOSFET module is adopted for power circulation till the module is completely aged and fails; sampling the electrical parameters of the SiC MOSFET module as a data set during a power cycle; 2, establishing a SiC MOSFET module junction temperature prediction model, wherein the SiC MOSFET module junction temperature prediction model comprises a first BP neural network model and a second BP neuralnetwork model which are connected in sequence; 3, carrying out model training by adopting a data set pair; and step 4, transplanting the trained SiC MOSFET module junction temperature prediction modelinto the FPGA, inputting a current Id in the actual operation of the tested SiC MOSFET module, and outputting a corresponding junction temperature Tc in real time. The junction temperature of the SiCMOSFET module can be accurately obtained, and safe and stable operation of the module is ensured.

Description

technical field [0001] The invention belongs to the field of electronic technology, and relates to an online prediction method for the junction temperature of a SiC MOSFET module in the whole life cycle. Background technique [0002] SiC MOSFET modules combine the advantages of high temperature resistance, high voltage resistance, fast switching speed, and low switching loss. With the development of science and technology, aerospace, communication, nuclear energy and many other fields urgently need a power electronic device that can still work normally under high temperature, high frequency and other environments. The high temperature characteristics of SiC are obvious, the maximum temperature of the chip can reach 600°C, and the thermal breakdown junction temperature of the module can reach 250°C. However, due to the particularity of the operating environment of the device, a large amount of heat will be generated in the operating state, resulting in temperature rise and t...

Claims

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Application Information

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IPC IPC(8): G06Q10/04G06N3/08G06N3/04
CPCG06Q10/04G06N3/084G06N3/045
Inventor 孟昭亮吕亚茹李静宇高勇杨媛艾胜胜方正鹏卢志鹏王好贞
Owner XI'AN POLYTECHNIC UNIVERSITY
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