A kind of CR-doped ZNS intermediate zone thin film and preparation method thereof

A technology for film preparation and intermediate zone, which is applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems such as the inability of light absorption intensity to meet the requirements and the uneven distribution of crystal particles in the Cr-ZnS film. Achieve the effect of improving light absorption intensity, enhancing photocurrent, and uniform size distribution

Active Publication Date: 2021-11-26
鄂尔多斯应用技术学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Cr-ZnS film prepared by chemical water bath method and laser deposition method has uneven distribution of internal crystal particles, and the light absorption intensity cannot meet the requirements.

Method used

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  • A kind of CR-doped ZNS intermediate zone thin film and preparation method thereof
  • A kind of CR-doped ZNS intermediate zone thin film and preparation method thereof
  • A kind of CR-doped ZNS intermediate zone thin film and preparation method thereof

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Effect test

Embodiment 1

[0057] see figure 1 Preparation process, a method for preparing a Cr-doped ZnS intermediate zone film in this embodiment, the method steps are as follows:

[0058] Step 1: preparing a ZnS target; select a circular target with a diameter of 65mm, a purity of 99.99%, and a thickness of 5mm. Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0059] Step 2: Preparation of Cr 2 S 3 Target material; choose Cr with a thickness of 3mm and a purity of 99.99% 2 S 3 . Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0060] Step 3: Clean the soda-lime glass substrate, first cut the soda-lime glass substrate into 2cm×2cm, clean the surface dirt and debris with detergent, then ultrasonically use deionized water for 20min, and then soak in 10% dilute sulfuric acid After 20 minutes, take out the soda-lime glass substrate and clean it with deionized water; put the cleaned soda-lime glass substrate into carbon tetrachloride, acetone, and absolute ethanol in turn for...

Embodiment 2

[0068] For the preparation process, please refer to figure 1 , a method for preparing a Cr-doped ZnS intermediate zone thin film of the present embodiment, the method steps are as follows:

[0069] Step 1: preparing a ZnS target; select a circular target with a diameter of 65mm, a purity of 99.99%, and a thickness of 5mm. Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0070] Step 2: Preparation of Cr 2 S 3 Target material; choose Cr with a thickness of 3mm and a purity of 99.99% 2 S 3 . Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0071] Step 3: Clean the soda-lime glass substrate, first cut the soda-lime glass substrate into 2cm×2cm, clean the surface dirt and debris with detergent, then ultrasonically use deionized water for 20min, and then soak in 10% dilute sulfuric acid After 20 minutes, take out the soda-lime glass substrate and clean it with deionized water; put the cleaned soda-lime glass substrate into carbon tetrachloride, acetone...

Embodiment 3

[0079] For the preparation process, please refer to figure 1 , a method for preparing a Cr-doped ZnS intermediate zone thin film of the present embodiment, the method steps are as follows:

[0080] Step 1: preparing a ZnS target; select a circular target with a diameter of 65mm, a purity of 99.99%, and a thickness of 5mm. Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0081] Step 2: Preparation of Cr 2 S 3 Target material; choose Cr with a thickness of 3mm and a purity of 99.99% 2 S 3 . Manufacturer: Beijing Xingyou Economic and Trade Co., Ltd.

[0082] Step 3: Clean the soda-lime glass substrate, first cut the soda-lime glass substrate into 2cm×2cm, clean the surface dirt and debris with detergent, then ultrasonically use deionized water for 20min, and then soak in 10% dilute sulfuric acid After 20 minutes, take out the soda-lime glass substrate and clean it with deionized water; put the cleaned soda-lime glass substrate into carbon tetrachloride, acetone...

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Abstract

The invention discloses a Cr-doped ZnS intermediate zone thin film and a preparation method thereof. The preparation method firstly cleans the soda-lime glass substrate, and then combines the ZnS target material with the Cr 2 S 3 The targets are respectively installed on the target positions of the magnetron sputtering apparatus, and then the cleaned soda-lime glass substrate is fixed on the stage, vacuumized, and then alternately sputtered ZnS and Cr in turn. 2 S 3 , deposit Cr-ZnS on the soda-lime glass substrate to obtain a laminated film, and finally put the laminated film into an annealing furnace for annealing, and finally obtain a Cr-ZnS intermediate zone film. The preparation method of the Cr-doped ZnS intermediate zone thin film of the present invention adopts the alternating magnetron sputtering method combined with the Cr-ZnS thin film prepared by annealing under a protective atmosphere, which has a mixed structure of sphalerite and wurtzite, In its UV-vis-NIR light absorption spectrum, it is located near 650nm and 459nm, with two additional absorption peaks appearing, indicating that there is an intermediate band formation in the original energy band structure, resulting in an increase in the light absorption coefficient and an increase in the light absorption intensity, further Provide guidance for the preparation of Cr‑ZnS intermediate zone thin film solar cells.

Description

technical field [0001] The invention relates to an intermediate band absorbing layer material in the field of solar cells, in particular to a Cr-doped ZnS intermediate band thin film and a preparation method thereof. Background technique [0002] Since the 1970s, people have begun to study the optics, electricity, structure and magnetism of chromium-doped zinc sulfide (Cr-ZnS). Cr-ZnS has potential optoelectronic and spintronic applications, for example, it can be used as a laser material for near-infrared and mid-infrared lasers. It is also called dilute ferromagnetic semiconductor, and ferromagnetism at room temperature has also been confirmed. [0003] In the prior art, the research team only theoretically found that Cr-ZnS can be used as an intermediate band (hereinafter referred to as: IB) material for IB thin film solar cells. Experimentally, Cr-ZnS films have been prepared by chemical water bath method and laser deposition method. However, the Cr-ZnS film prepared ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58
CPCC23C14/0623C23C14/0629C23C14/352C23C14/5806C23C14/5893
Inventor 范文亮姚海燕吕笑公
Owner 鄂尔多斯应用技术学院
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