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Soldering method of tantalum target material and copper back plate

A brazing method and tantalum target technology are applied in the field of welding tantalum targets and copper backplanes, which can solve the problem that the bonding strength of the welding surface needs to be further improved, and achieve long-term stable use, reliable bonding, and improved welding performance. Effect

Inactive Publication Date: 2020-05-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Similarly, CN 103567583A discloses a welding method for aluminum target components, including: using molten tin solder to perform surface infiltration treatment on the welding surface of the aluminum target blank; using molten indium solder to surface the welding surface of the back plate Wetting treatment: using the tin solder and the indium solder to weld the welding surface of the aluminum target blank and the welding surface of the back plate together, but the bonding strength of the welding surface needs to be further improved

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  • Soldering method of tantalum target material and copper back plate
  • Soldering method of tantalum target material and copper back plate

Examples

Experimental program
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Effect test

Embodiment 1

[0059] This embodiment provides a brazing method for a tantalum target and a copper back plate, the brazing method includes the following steps:

[0060] (1) Correct the warpage of the tantalum target so that the flatness of the target is ≤0.2mm;

[0061] (2) The surface of the welding surface of the tantalum target and the copper back plate is independently sandblasted; the sand used for the sandblasting is No. 46 white jade, and the air pressure range is 0.57MPa; the sandblasting time is 3min; The vertical distance between the sandblasting gun and the welding surface during sandblasting is 90mm; the angle between the sandblasting direction of the sandblasting gun and the welding surface can be flexibly adjusted within the range of 0-180° during the sandblasting process, so that each welding surface The roughness distribution at the point is uniform;

[0062] (3) Perform electroless nickel plating on the welding surface of the tantalum target and the copper back plate after ...

Embodiment 2

[0069] This embodiment provides a brazing method for a tantalum target and a copper back plate, the brazing method includes the following steps:

[0070] (1) Correct the warpage of the tantalum target so that the flatness of the target is ≤0.2mm;

[0071] (2) A boss is set on the welding surface of the tantalum target, and a groove matching the boss is arranged on the welding surface of the copper back plate. The difference between the depth of the groove and the height of the boss is 0.5mm, and the groove is The diameter of the effective circle is 0.4mm larger than the equivalent circle diameter of the boss; then the surface sandblasting treatment is carried out independently on the welding surface of the tantalum target and the copper back plate; the sand grains used for the sandblasting treatment are No. The range is 0.57MPa; the sandblasting time is 3min; the vertical distance between the sandblasting gun and the welding surface is 90mm; the angle between the sandblasting ...

Embodiment 3

[0079] This embodiment provides a brazing method for a tantalum target and a copper back plate, the brazing method includes the following steps:

[0080] (1) Correct the warpage of the tantalum target so that the flatness of the target is ≤0.2mm;

[0081] (2) Set a boss on the welding surface of the tantalum target, and set a groove matching the boss on the welding surface of the copper back plate. The difference between the depth of the groove and the height of the boss is 0.4mm, and the groove is equal The diameter of the effective circle is 0.5mm larger than the equivalent circle diameter of the boss; then the surface of the welding surface of the tantalum target and the copper back plate is independently subjected to surface sandblasting treatment; the sand used for the sandblasting treatment is No. The range is 0.56MPa; the sandblasting time is 3.5min; the vertical distance between the sandblasting gun and the welding surface is 95mm; the angle between the sandblasting di...

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Abstract

The invention provides a soldering method of a tantalum target material and a copper back plate. The soldering method comprises the following steps that (1) the warping degree of the tantalum target material is corrected to make the flatness of the target material less than or equal to 0.2 mm; (2) welding surfaces of the tantalum target material and the copper back plate are respectively and independently subjected to surface sandblasting treatment; (3) the welding surfaces of the tantalum target material and the copper back plate are respectively and independently subjected to nickel plated treatment; and (4) after the nickel plated treatment, the tantalum target material and the copper back plate are subjected to soldering connection to complete soldering welding connection. According tothe soldering method, the roughness of the welding surfaces is improved through the sandblasting treatment, and the tantalum target material and the copper back plate are effectively combined throughthe nickel plated treatment, and thus the welding effect of the tantalum target material and the copper back plate is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a welding method of a target material and a back plate, in particular to a welding method of a tantalum target material and a copper back plate. Background technique [0002] Sputtering coating is a common process in semiconductor production. During the sputtering coating process, the target for sputtering is usually fixed by using a back plate, that is, the target is connected to the back plate by welding, bolting, etc. fixed. [0003] Due to the different target materials, the types of solder used in welding and welding conditions are different. The process environment of sputtering coating is relatively harsh, the target components are in strong electric field and strong magnetic field, and the target components are bombarded by various high-speed particles during the magnetron sputtering process, and the temperature of the target components is relatively hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/00B23K1/20B23K31/02
CPCB23K1/0008B23K1/203B23K31/02
Inventor 姚力军潘杰边逸军王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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