A kind of cadmium zinc silicon sulfur crystal and its preparation method and use

A crystal, cadmium-zinc technology, applied in the field of laser frequency doubling crystals in the mid-to-far infrared band, can solve the problem that the range of mid-to-far infrared bands cannot be applied, it is difficult to obtain large-size, high-quality single crystals, and it cannot meet the practical development of nonlinear optical crystal materials Requirements and other issues, to achieve the effects of strong nonlinear optical effects, high laser damage threshold, and wide infrared transmission range

Active Publication Date: 2021-10-01
HEBEI UNIVERSITY
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these materials contain oxygen, there are vibrational excitations in the infrared band, so they cannot be used in the mid-to-far infrared range.
[0004] Today's practical infrared nonlinear optical materials are mostly ABC 2 Type chalcopyrites, such as AgGaS 2 and ZnGeP 2 However, there are some serious shortcomings in this type of crystal, such as low laser damage threshold, two-photon absorption of near-infrared laser (such as Nd:YAG, 1064 nm), severe anisotropic thermal expansion, etc. , making it difficult to obtain large-size, high-quality single crystals, which cannot meet the requirements for the practical development of nonlinear optical crystal materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of cadmium zinc silicon sulfur crystal and its preparation method and use
  • A kind of cadmium zinc silicon sulfur crystal and its preparation method and use
  • A kind of cadmium zinc silicon sulfur crystal and its preparation method and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The starting raw material 0.0433 g cds, 0.097 g ZNS and 0.092 g of the glove of inert gas argon, respectively, the water content and oxygen content, respectively 2 The three molar ratios are 3: 1: 1, and the weighing raw materials are well grinded in a mortar, and then put in a clean graphite crucible, and then load a length of 20 cm, a quartz glass tube having a diameter of 10 mm. In the middle, the quartz glass tube containing the raw material is 10 in the vacuum. -3 The vacuum sealing is pumped under the conditions of PA; the sealed quartz glass tube is raised from the room temperature of 30 ° C / h to 400 ° C, heat the temperature 10 h, and then warm to 900 ° C at 30 ° C / h, heat insulation 80 H, the reaction between the components in the raw material composition is obtained by obtaining a compound; finally cooling at a temperature of 5 ° C / h, it is reduced to room temperature, and the sample is taken out in a mortar, which is obtained from yellow transparent small p...

Embodiment 2

[0051] At the water content and oxygen content of 0.01 ppm, the starting material of the glove box filled with inert gas argon, CDS: ZNS: SIS 2 The three molar ratios were 2.75: 1: 1, and after the mortar was well grinded, it was placed in a clean graphite crucible, put it into a quartz glass tube having a diameter of 10 mm, will be equipped with a raw material. Glass tube is 10 in vacuo -3 The vacuum seal under the conditions of the PA; then the sealed quartz glass tube is raised from the room temperature 20 ° C / h to 400 ° C, heat insulation 7 h, and then warm to 925 ° C at 30 ° C / h, heat 80 h; Finally, the temperature of 2 ° C / h is cooled to room temperature, take out the graphite crucible to obtain a yellow transparent small particle CD. 3 Znsis 6 The single crystal is analyzed by single crystal X-ray diffraction analysis, indicating that the crystal is a cadmium-zercyal sulfur crystal.

Embodiment 3

[0053] At the water content and oxygen content, it is 0.05 ppm, respectively, and the inert gas argon is weighed inside the bin of the inert gas argon, the starting material CDS: ZNS: SIS: SIS 2 The molar ratio is 2.6: 1: 1, and after the mortar is ground, it is placed in a clean graphite crucible, and the quartz glass having a raw material will be loaded with a quartz glass tube having a raw material in a quartz glass tube having a raw material. True is 10 -3 The vacuum sealing is pumped under the conditions of the PA; then the sealed quartz glass tube is raised from the room temperature at a temperature 40 ° C / h to 600 ° C, heat insulation 10 h, and then hete the temperature of 30 ° C / h to 950 ° C, Insulation 75 h; Finally, at a rate of 4 ° C / h, it is reduced to room temperature, and the graphite crucible is removed to give a yellow transparent small particle CD. 3 Znsis 6 Single crystal.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
band gapaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a cadmium-zinc-silicon-sulfur crystal and its preparation method and application. The chemical formula of cadmium-zinc-silicon-sulfur is Cd 3 ZnSiS 6 , the molecular weight is 623.02, which is a yellow transparent single crystal with non-centrosymmetric structure, belonging to the monoclinic crystal system, with [(Cd / Zn)S 4 ], [CdS 4 ] and [SiS 4 ] group constitutes a structural element. The preparation method of the cadmium-zinc-silicon-sulfur crystal of the present invention is simple, and the obtained cadmium-zinc-silicon-sulfur crystal has excellent optical properties, the band gap is equivalent to that of sulfur-gallium-silver, the infrared transmission range is wide, the laser damage threshold is high, and the nonlinear optical effect is strong. The mid-to-far infrared nonlinear optical crystal has potential application value in high-power laser system.

Description

Technical field [0001] The present invention relates to a medium-long infrared wave band laser multiplier crystal, in particular to a cadmium zinc silicone sulfur crystal and a preparation method thereof. Background technique [0002] The infrared nonlinear optical crystal is a core device of laser frequency conversion technology. It is a class of single crystal materials that utilize phase matching techniques to output tunable medium far infrared lasers, due to two important atmospheric windows (3 to 5 μm and 8 ~ 14μm) In this band range, the current exploration and development of infrared nonlinear optical crystals generally need to ensure high permeability in this band. [0003] At present, the main nonlinear optical materials mainly include KDP (kH) 2 PO 4 ), BBO (β-bab 2 O 4 ), Lbo (lib) 3 O 5 Most of them are suitable for ultraviolet visible and near-infrared light. Since these materials are oxygen, there is a vibration excitation in the infrared wave band, and thus cannot ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B1/10G02F1/355C01B33/00
CPCC01B33/00C01P2002/72C01P2002/77C01P2002/82C01P2004/02C30B1/10C30B29/46G02F1/3551
Inventor 武奎杨亚
Owner HEBEI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap