Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for preparing single crystal and method for preparing silicon carbide single crystal

A single crystal and seed crystal technology, which is applied in the field of single crystal preparation devices, can solve the problems of difficult to realize the radial temperature gradient of silicon carbide single crystal, the radial temperature gradient of difficult silicon carbide single crystal, and the decrease of axial temperature gradient. To achieve the effect of ensuring uniform heating, less defects, and increasing the axial temperature gradient

Active Publication Date: 2020-05-01
SICC CO LTD
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing induction coil heating method, on the one hand, is difficult to increase the axial temperature gradient of the growth chamber without affecting the radial temperature gradient and ensure a small radial temperature gradient; on the other hand, when reducing the radial temperature gradient , the axial temperature gradient also has a large drop, and the growth rate cannot be guaranteed
In addition, it is difficult to control the radial temperature gradient in a large range during the growth process of silicon carbide single crystal in the current equipment, and it is difficult to realize the change of radial temperature gradient required in the growth of silicon carbide single crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for preparing single crystal and method for preparing silicon carbide single crystal
  • Device for preparing single crystal and method for preparing silicon carbide single crystal
  • Device for preparing single crystal and method for preparing silicon carbide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] refer to figure 1 with 2 , the embodiment of the application discloses a device for preparing single crystal, refer to figure 1 . The device for preparing a single crystal includes a crucible 2, a heating coil group and a heat preservation structure. The crucible 2 forms a growth chamber, and the growth chamber includes a raw material area for accommodating raw materials 8 and a crystal growth area for setting a seed crystal 10. The heating coil group surrounds the crucible 2. The side wall is arranged, and the heating coil group includes a first coil group 42 arranged corresponding to the height of the raw material area and a second coil group 44 arranged corresponding to the height of the crystal growth area. Along the direction from the raw material 8 to the seed crystal 10, the second coil The inner diameter of the set 44 is increased. The diameter of the coil increases from the raw material 8 upward, thereby reducing the temperature at the seed crystal 10. Compa...

Embodiment 2

[0084] refer to image 3 The difference between this embodiment and the device for preparing a single crystal in Example 1 is that the adjustment mechanism is different, and the adjustment mechanism also includes a buffer chamber 128 .

[0085] Specifically, the buffer chamber 128 is arranged above the regulating chamber 124, and a first valve 1282 is arranged between the buffer chamber 128 and the regulating chamber 124; The temperature of the chamber is the same as that of the ambient gas. The first conveying mechanism 126 is set as a manipulator, and after the manipulator transports the thermal insulation ring 1222 obtained to the buffer chamber 128, when the temperature of the thermal insulation ring 1222 is the same as the temperature of the adjustment chamber 124, the first valve 1282 is opened, and the mechanical arm places the thermal insulation ring 1222 In the temperature measurement hole 622 ; the quartz window 1242 is set on the side wall of the adjustment chamber...

Embodiment 3

[0090] Unless otherwise specified, the raw material 8 in the examples of the present application was purchased through commercial channels.

[0091] Analytic method is as follows in the embodiment of the application:

[0092] 1. The cavity test adopts the BX51 microscope of OLYMPUS company.

[0093] 2. MicroProf@TTV200 automatic surface tester of FRT Company is used for surface test of silicon carbide single crystal substrate.

[0094] Unless otherwise specified, the raw materials 8 and gases in the examples of the present application are purchased from commercial sources, wherein the purity of the silicon carbide raw material 8 is 99.99%, and the purity of the high-purity inert gas (Ar or He) is greater than 99.999%.

[0095] Using the crystal growth device of any of the above embodiments to grow a silicon carbide single crystal, the method for preparing a silicon carbide single crystal includes the following steps:

[0096] 1) Assembly: place the silicon carbide powder on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a device for preparing a single crystal and a preparation method for a silicon carbide single crystal, belonging to the field of semiconductor materials. The device for preparing the single crystal comprises a crucible, a heating coil group and a heat preservation structure, wherein the crucible forms a growth cavity which comprises a raw material area used for placing rawmaterials and a crystal growth area used for arranging seed crystals; the heating coil group is arranged around the side wall of the crucible and comprises a first coil group corresponding to the rawmaterial area and a second coil group corresponding to the crystal growth area; and the inner diameter of the second coil group is increased in a direction from raw materials to seed crystals. The single crystal growth device provided by the invention can adjust the radial temperature gradient in the growth cavity for growth of the single crystal, can reduce the radial temperature gradient, can guarantee a certain axial temperature gradient at the same time, and can realize high-efficiency preparation of high-quality single crystals.

Description

technical field [0001] The application relates to a device for preparing a single crystal and a method for preparing a silicon carbide single crystal, belonging to the field of semiconductor materials. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, RF devices, optoelectronic devices and other fields. [0003] At present, the main preparation method of silicon carbide single crystal is physical vapor transport (PVT) method. In the process of preparing single crystal by PVT method, there are radial temperature gradient and axial temperature gradient in the growth chamber of growing single crystal. In the stable growth stage of single crystal, a larger axial temperature gradient has a faster single crystal growth rate, and a smaller radial temperature gradient can reduce the introduction of stress and dislocation. However, it is difficult to simultaneo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B23/002C30B29/36
Inventor 高宇晗方帅周敏姜兴刚窦文涛宗艳民
Owner SICC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com