Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Formula of core-free soft welding wire product for TC power device

A technology for power devices and soft welding wires, applied in welding media, welding equipment, welding/cutting media/materials, etc., to achieve the effects of wide applicability, oxide reduction, and high innovation

Inactive Publication Date: 2020-05-01
上海锡喜材料科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a kind of non-flux-cored soft soldering wire products for TC power devices in view of the existing problems in the prior art that the current soft soldering wire materials are mainly imported, and there is no such content in domestic new searches. recipe invention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The technical solution adopted in this specific embodiment is: the composition of the material formula of the present invention is as follows: + Trace elements (Ga, Ge, P and other elements <2000ppm) and the remaining Pb (lead) elements are mixed and smelted.

[0014] Further, the technology used in the finished product produced by the present invention is metal smelting and extrusion liquid forming technology. The use of metal smelting and extrusion liquid forming technology ensures the uniformity of alloy composition and low oxidation rate, which is more advantageous than the mainstream foreign extrusion forming process.

[0015] Further, the high temperature required to achieve the finished product process of the present invention needs to reach 320~380°C. Through the high temperature of the production process, the generation of oxides can be reduced, the alloy composition can be evenly distributed, and the welding wire can be formed uniformly, which solves the prob...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a formula of a core-free soft welding wire product for a TC power device, and relates to the field of chip bonding material manufacturing industry. According to the formula, the product is formed through mixing and melting of 1 to 5.5% of Sn, 1 to 3% of Ag and 2000 ppm of microelements of Ga, Ge, P and the like and remaining Pb. The formula has the beneficial effects that the formula has the wide adaptation and high innovation, through adding of the microelements, the change range of BLT is reduced, control undesirability of the BIT can be solved, wettability is improved, the potential layering phenomenon easily appearing in the chip bottom and a welding material can be solved, tin waves are not generated, through innovation of the production process, oxide is reduced, alloy component uniform distribution and welding wire forming consistency can be ensured, and the problems that the product is easily oxidized and is only applied in a discrete device, and qualityneeds of high-end power devices cannot be met are solved.

Description

technical field [0001] The invention relates to the field of chip bonding material manufacturing industry, in particular to a formula invention related to non-flux-core soft soldering wire products for TC power devices. Background technique [0002] With the rapid development of power chips from consumer electronics to industrial control, automotive electronics and other fields, especially in recent years, power devices represented by MOSFETs and IGBTs have evolved towards high frequency, high power, and integration. High density of heat; there is a difference in the coefficient of thermal expansion (CTE) between the gold-backed wafer and the lead frame, which is more likely to cause shear force, which requires a more complete soldering material during the die-bonding process of the power device package to solve the problem of heat dissipation and These two major technical problems are thermal fatigue, and the current soft welding wire materials are mainly imported, and ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/26
CPCB23K35/268
Inventor 吴斌
Owner 上海锡喜材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com