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A method for igzo photocurrent regulation based on two-dimensional black phosphorus materials

A technology of black phosphorus and construction method, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of complex preparation process of heterojunction devices, small sample size, and unstable device performance, etc., and achieve photocurrent intensity. and response time efficient, repeatable and easy to achieve

Active Publication Date: 2021-12-03
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned heterostructures are all based on two-dimensional materials, the sample size is small, the transfer of the heterojunction and the preparation process of the device are relatively complicated, and the device performance is not stable enough.

Method used

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  • A method for igzo photocurrent regulation based on two-dimensional black phosphorus materials
  • A method for igzo photocurrent regulation based on two-dimensional black phosphorus materials
  • A method for igzo photocurrent regulation based on two-dimensional black phosphorus materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] based on figure 1 The IGZO device is prepared using a mask, and the preparation process includes the following steps:

[0061] (1) Prepare the mask plate: draw the mask plate according to the needs of the experiment (such as figure 1 (a) and (b)), what used in the present embodiment is a set of mask plate, wherein a kind of is used for preparing IGZO channel layer (mask plate 1), and another kind is used for preparing electrode on IGZO surface (Mask version II), the channel width of mask version I is 40um, look for the mask version preparation manufacturer to process (the manufacturer that is looking for in this embodiment is micro-nano scientific research experiment equipment company), in order to guarantee the mask version Flatness and thinner thickness, the original material used is a stainless steel plate with a thickness of 3mm;

[0062] (2) Substrate cleaning: In this embodiment, a silicon wafer coated with a 300nm silicon dioxide layer is used as a substrate, a...

Embodiment 2

[0079] Embodiment 2 Change IGZO channel width

[0080] Prepare IGZO devices using a mask:

[0081] (1) Prepare mask plate: different from the mask plate in embodiment 1, the channel width of mask plate 1 in the present embodiment is 80um; Material and processing factory are all the same;

[0082] (2)~(5): Same as (2)~(5) in Example 1, prepare an IGZO device with a channel width of 80um; prepare black phosphorus-IGZO heterogeneous structures with different structures: same as in Example 1 The same preparation method, prepared four types of black phosphorus-IGZO heterogeneous.

[0083] Characterization of photocurrent performance of different types of heterojunctions (type I and type III): the photocurrent was measured by the test method in Example 1.

[0084] Test results such as Image 6 : In type I, that is, after the black phosphorus covers the electrodes at both ends of the channel, the photocurrent in the original IGZO decreases, but the magnitude of the decrease is not...

Embodiment 3

[0085] Embodiment 3 Changing the thickness of the IGZO channel

[0086] (1)~(2): same as (1)~(2) in embodiment 1;

[0087] (3) Use the fixture to fix the stainless steel mask on the pre-cut substrate surface with the same size as the mask. By controlling the fixture, the mask is in close contact with the substrate to avoid the magnetron sputtering process. Infiltrated IGZO; use magnetron sputtering method to deposit IGZO, put the substrate with fixed mask plate into the magnetron sputtering chamber, vacuumize to below 10Pa, and then pass in argon and oxygen, the flow rates are respectively 10mL / min and 0.3mL / min, the reaction pressure is 400mPa, the sputtering power is 1.76W / cm 2 , the sputtering time is 12min; a 40nm IGZO channel is prepared;

[0088] (4) to (5): Same as in Example 1.

[0089] Preparation of black phosphorus-IGZO heterojunctions with different structures: the same preparation method as in Example 1, to prepare type I and type III black phosphorus-IGZO hete...

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Abstract

The invention discloses a method for realizing IGZO photocurrent regulation based on two-dimensional black phosphorus material, and belongs to the field of semiconductor devices. The invention proposes a method for preparing IGZO-black phosphorus heterostructure by using dry transfer technology, and by changing the contact mode between IGZO and black phosphorus, the regulation of the photocurrent response of IGZO to different laser wavelengths can be realized. The medium IGZO channel and electrodes are all magnetron sputtered with a mask, which has good repeatability and can realize the preparation of large-area and multi-device. The black phosphorus sample is prepared by mechanical lift-off method, and the thickness and size can be controlled. The preparation utilizes the dry transfer technology, the operation is simple, and the controllability is strong. The invention is beneficial to promote the development of the IGZO thin film in the micro-nano field and the semiconductor industry.

Description

technical field [0001] The invention relates to a method for realizing IGZO photocurrent regulation based on a two-dimensional black phosphorus material, belonging to the field of semiconductor devices. Background technique [0002] Amorphous indium gallium zinc oxide (IGZO for short) is a new type of transparent oxide semiconductor material with a wide band gap (~3.5eV), high mobility (~35.8cm 2 V -1 the s -1 ), low preparation temperature and extremely high stability are currently research hotspots in the field of display technology, and are also considered to be an important material in the development of flexible display technology, flexible wearable electronic technology and new sensor technology. . In 2004, researchers such as Hosono and Nomura used IGZO for the first time to realize the preparation of flexible substrate PET fully transparent thin film transistor (TFT) at room temperature, and its field effect mobility exceeds 10cm 2 V - 1 the s -1 , an order of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0336
CPCH01L31/18H01L31/0336Y02P70/50H01L31/109H01L31/032H01L31/1884
Inventor 南海燕李大庆邵枫肖少庆顾晓峰
Owner JIANGNAN UNIV
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