Manufacturing method of target material assembly

Abstract

The invention provides a manufacturing method of a target material assembly. The method comprises the steps: providing a silicon dioxide target material and a metal back plate, wherein the silicon dioxide target material is provided with a target material welding face, and the metal back plate is provided with a back plate welding face; forming a nickel layer on the welding surface of the silicondioxide target material by adopting a plasma spraying process; and welding the nickel layer which locates on the welding surface of the silicon dioxide target material on the welding surface of the metal back plate to form the target material assembly. The method achieves welding between the silicon dioxide target material and the metal back plate, is suitable for the working environment with thehigh temperature, helps to improve the welding bonding rate and bonding strength between the silicon dioxide target material and the metal back plate, and meanwhile, meets the using requirement of thesemiconductor sputtering target material at the high temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a target component. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. [0003] According to different materials, targets can be divided into: metal targets, alloy targets and ceramic targets. Among them, ceramic targets can be divided into: ITO targets, magnesium oxide targets, iron oxide targets, silicon nitride targets, silicon carbide targets, titanium nitride targets, chromium oxide targets, zinc oxide targets, etc. according to different chemical compositions. At present, silica targets are widely used in the fields of s...

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Problems solved by technology

[0004] In the existing process, when the silica target and the metal back plate are welded together, the silica target and the metal back plate cannot be directly welded together for two reasons: first, metallurgical incompatibility, That is, the silicon dioxide target is directly welded to the metal back plate, and the metal back plate cannot be wetted on the surface of the silicon dioxide target after melting; second, the physical properties do not match, that is, the thermal expansion coefficient of the metal and the silicon dioxide is greatly different, and high temperature Thermal stress reduces the bonding strength during soldering; this makes it difficult to solder the silica target to the metal backplane

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