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Method for preparing passivation contact structure based on low pressure chemical vapor deposition (LPCVD) secondary ion injection

A technology of contact structure and secondary ions, which is applied in the field of solar cells, can solve problems such as increase and Auger recombination increase, and achieve the effects of improving electrical conductivity, increasing surface ion concentration, and reducing contact resistance

Active Publication Date: 2020-04-10
江苏杰太光电技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Normally, increasing the ion implantation dose can increase the surface ion concentration, reduce the square resistance and improve the conductivity, but the inevitable diffusion of ions through the tunnel oxide layer will also increase accordingly, resulting in an increase in Auger recombination (Baidu Encyclopedia: Auger recombination refers to the recombination process corresponding to Auger transition

Method used

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  • Method for preparing passivation contact structure based on low pressure chemical vapor deposition (LPCVD) secondary ion injection
  • Method for preparing passivation contact structure based on low pressure chemical vapor deposition (LPCVD) secondary ion injection
  • Method for preparing passivation contact structure based on low pressure chemical vapor deposition (LPCVD) secondary ion injection

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preparation example Construction

[0044] A method for preparing a solar cell with an N-type passivation contact structure in this embodiment comprises the following steps:

[0045] (1) Select an N-type silicon substrate 5 with a thickness of 150~170μm, a resistivity of 0.3~2Ω∙cm, and a size of 156.75mm×156.75mm as the substrate for double-sided texturing. After this step, the battery structure is as follows: figure 1 shown;

[0046] (2) On the N-type silicon surface after the texture treatment in step (1), boron tribromide is used as the boron source to prepare the double-sided p+ doped region 4; wherein, the diffusion temperature is 850~1000°C, and the time is 50~ 80min, square resistance 80~100Ω / sqr, the battery structure after this step is as follows figure 2 shown;

[0047] (3) Put the N-type silicon that has undergone double-sided boron diffusion in step (2), and select one side to put HF and HNO 3 , and H 2 SO 4 Etching treatment in a mixed solution to remove the p+ doped region 4 on the back and o...

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Abstract

The invention provides a method for preparing a passivation contact structure based on low pressure chemical vapor deposition (LPCVD) secondary ion injection. The problem encountered when a heavily-doped polysilicon layer is prepared through a tubular LPCVD ion injection method can be well solved, namely, the problem that the number of ions diffused to penetrate through a tunneling oxide layer isincreased when the surface ion concentration is improved at the same time can be solved, the surface ion concentration of polysilicon can be improved, the electrical conductivity is improved, and thecontact resistance is reduced, so that cell fill factors are improved; the number of the ions diffused to penetrate through the tunneling oxide layer is reduced, the auger recombination is reduced, apassivation effect of the structure is improved, and the open-circuit voltage and the short-circuit current are improved; and the technological process is mature and can be accomplished by adopting anexisting equipment secondary process.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a passivation contact structure based on LPCVD secondary ion implantation in an N-type TOPCon solar cell. Background technique [0002] In the field of solar cell technology, the main factor affecting the improvement of cell efficiency is the recombination of electron-hole pairs. In the entire battery structure, due to the disordered arrangement of silicon atoms, there are a large number of dangling bonds on the surface of the silicon wafer. The dangling bonds can easily capture electrons and increase the recombination of the battery surface. Metal-semiconductor contact regions are also more prone to recombination. In order to improve the efficiency of solar cells and reduce the recombination of the surface and the gold half-contact area, a thin layer of dielectric or semiconductor material is usually deposited on the surface of the device, that is, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/44C30B25/00C30B31/22C30B33/02C30B29/06H01L31/18
CPCC23C16/0227C23C16/0272C23C16/44C30B25/00C30B31/22C30B33/02C30B29/06H01L31/1868H01L31/1804Y02P70/50
Inventor 林建伟陈嘉崔义乾乔振聪
Owner 江苏杰太光电技术有限公司
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