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Preparation method of high-transmission composite Ag film

A high-transmittance, thin-film technology, applied in the field of preparation of composite Ag thin films, can solve the problems of reduced surface roughness, limited wettability or effectiveness, and achieve good thermal stability

Inactive Publication Date: 2020-02-25
广州市思创信息技术有限公司
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Problems solved by technology

However, these seed layers degrade the surface roughness of Ag with limited wettability or effectiveness; Ge is a low-bandgap semiconductor and has strong absorption in the visible region, which is undesirable for low-loss optical coatings

Method used

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  • Preparation method of high-transmission composite Ag film
  • Preparation method of high-transmission composite Ag film
  • Preparation method of high-transmission composite Ag film

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Embodiment Construction

[0028] The present invention will be further described in detail in conjunction with the accompanying drawings and specific embodiments.

[0029] Step 1: Glass substrate pretreatment: Ultrasonicate the glass substrate in absolute ethanol for 15 minutes, wash with deionized water, soak in cleaning solution for 30-45 minutes, and dry under nitrogen flow

[0030] The cleaning solution is a mixture of ammonia, hydroxide and deionized water in a mass ratio of 1:2:5.

[0031] Step 2: Using the radio frequency magnetron sputtering method with a sputtering power of 120W-140W, the deposition chamber is evacuated to make it less than 1×10 -5 Pa pressure, to preheat the mass flowmeter, DC power supply, and RF power supply, TiO 2 Deposit TiO on the target 2 Thin film, the purity is 99.99%, the working gas is a mixed gas of oxygen and argon, the partial pressure is 1:3, the flow rate is 70sccm, the negative bias voltage is 40V, the deposition time is 2 hours; anneal at 300-500°C after de...

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Abstract

The invention provides a preparation method of a high-transmission composite Ag film. The preparation method comprises the following steps that glass base plate pretreatment is carried out; a TiO2 film is prepared, specifically, a radio frequency magnetron sputtering method with the sputtering power of 120W - 140 W is adopted, a deposition chamber is vacuumized, a TiO2 target is adopted, working gas is a mixed gas of oxygen and argon, and annealing is carried out after deposition; a Cr-containing Ag film is prepared, specifically, a pure Ag target embedded with a chromium slice is used, the Cr-containing Ag film is deposited through vacuum magnetron sputtering, the sputtering power is 30W - 50 W, and sputtering gas is argon; and the TiO2 film is prepared again. According to the composite Ag film prepared by the preparation method, a TiO2 / Ag (Cr) / TiO2 multilayer structure has low resistance and high optical transmittance.

Description

technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a high-transmittance composite Ag thin film. Background technique [0002] Transparent conducting oxides (TCOs) are essential for various optoelectronic devices and are widely used as transparent electrodes in flat panel displays, touch screens, thin-film solar cells, organic light-emitting diodes, and electrochromic devices. Due to its excellent optical and electrical properties, indium tin oxide (ITO) is most widely used as a transparent electrode in various optoelectronic applications. However, the poor conductivity of ITO on large-area devices, the scarcity of indium resources, and high manufacturing costs prevent further large-scale promotion. Moreover, due to the lack of plasticity of ITO, it is also difficult to be applied in flexible devices. Therefore, it is crucial to develop commercially available indium-free alternatives to TCOs. [0003] ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/18C23C14/58
CPCC23C14/083C23C14/185C23C14/352C23C14/5806C23C28/30
Inventor 不公告发明人
Owner 广州市思创信息技术有限公司
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