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A kind of LED containing pmot:ppv/zno:cu/zno:al heterojunction and its preparation method

A heterojunction and homojunction technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as limited value of photobiological effects, achieve low prices for equipment and raw materials, and simple and safe methods Effect

Active Publication Date: 2022-01-04
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the defects and insufficiencies of the existing preparation technology, the present invention provides an LED containing PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction and its preparation method, which solves the main luminescence problem of the current commercial gallium nitride white light LED. The peak is located at 450nm, and the photobiological effects beneficial to the human body are of limited value.

Method used

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  • A kind of LED containing pmot:ppv/zno:cu/zno:al heterojunction and its preparation method
  • A kind of LED containing pmot:ppv/zno:cu/zno:al heterojunction and its preparation method

Examples

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Embodiment 1

[0032] Following the above technical scheme and in conjunction with the accompanying drawings, this embodiment provides a method for preparing an LED containing PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction, including the following steps:

[0033] Step 1: Put the ITO substrate into the magnetron sputtering vacuum chamber, use 99.99% zinc target and 99.9% aluminum target, pass in 3pa oxygen and 2pa argon, control the temperature of the substrate to 300°C, and use 110W power Co-sputtering was carried out for 30 min under the ITO substrate, and a ZnO:Al polycrystalline layer was obtained on the ITO substrate, and the samples were taken out. The molar ratio of ZnO to Al is 97:3.

[0034] Step 2: Prepare a mixed solution of zinc acetate and copper nitrate, the concentrations of zinc acetate and copper nitrate are 0.04mol / L and 0.005mol / L respectively, then put the ZnO:Al polycrystalline layer into the mixed solution, and raise the temperature to 95°C, After waiting for its growth for 5 ho...

Embodiment 2

[0038] Embodiment 2 (contrast):

[0039] The preparation method is the same as in Example 1, but step 2 is omitted, and the prepared device is a PMOT:PPV / ZnO:Al heterojunction. From figure 1 It can be seen that the main luminescence peak changes from around 490nm to around 450nm after shifting, indicating that it cannot have the same photobiological enhancement effect as Example 1, and its luminous intensity is obviously weaker than that of Example 1. From figure 2 It can be seen that the forward current is small, the reverse current is large, the rectification ratio is low, the rectification effect of the current-voltage characteristics is not as good as that of Example 1, and the electric injection efficiency is not as good as that of Example 1, because the device energy band structure of Example 2 Not as reasonable as that made in Example 1.

Embodiment 3

[0040] Embodiment 3 (contrast):

[0041] The preparation method and test are the same as in Example 1, but step 4 is omitted. From figure 1 It can be seen that the main peak of the photobiological effect at 490nm is significantly weaker than that of Example 1, and the overall luminous intensity is also significantly weaker than that of Example 1. From figure 2 It can be seen that the forward current is small, the reverse current is large, the rectification ratio is low, the rectification effect of the current-voltage characteristics is not as good as that of Example 1, and the electric injection efficiency is not as good as that of Example 1, because Example 3 has not been treated with plasma. The surface impurities of the PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction LED are more than the surface impurities of the PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction LED treated by plasma in Example 1.

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Abstract

The invention discloses a method for preparing an LED containing a PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction, which is characterized in that it comprises growing a ZnO:Cu / ZnO:Al heterojunction on an ITO substrate, and The mixed solution of PMOT and PPV is spin-coated on the surface of the ZnO:Cu polycrystalline layer of ZnO:Cu / ZnO:Al heterojunction for heat treatment, and finally is coated with a Ti electrode on the surface of the ZnO:Cu polycrystalline layer to obtain final product; The growth of ZnO:Cu / ZnO:Al heterojunction on the ITO substrate includes firstly growing the ZnO:Al polycrystalline layer on the ITO substrate, and then putting it into the mixed solution of zinc acetate and copper nitrate, in ZnO:Al A ZnO:Cu polycrystalline layer is grown on the surface of the polycrystalline layer, and finally, a ZnO:Cu / ZnO:Al heterojunction is obtained on the ITO substrate. The invention realizes the main luminous peak of 490nm through spectral modulation based on semiconductor energy band engineering, and can provide more excellent photobiological effects. The preparation method of the invention is simple and safe in process, and the equipment and raw materials used are cheap, and is suitable for industrialized large-scale preparation.

Description

technical field [0001] The invention belongs to the field of electronic materials and preparation thereof, in particular to an LED containing PMOT:PPV / ZnO:Cu / ZnO:Al heterojunction and a preparation method thereof. Background technique [0002] LED is a semiconductor light-emitting diode. LED has the characteristics of energy saving, environmental protection, long life and small size. It can be widely used in various indications, displays, decorations, backlights, general lighting and urban night scenes. Semiconductor ZnO nanowires have been successfully assembled into different types of nanodevices, such as nanowire field-effect transistors, nanowire lasers, nanowire sensors, and nanowire LEDs. However, some existing devices have unstable luminous performance and high working voltage. Research on UV LEDs based on ZnO nanorods has not been very successful, and its electroluminescence is basically in the visible light band. The main luminous peak of commercial gallium nitrid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/113H10K50/00H10K71/00
Inventor 段理魏星郭婷婷王昭
Owner CHANGAN UNIV
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