Control method for suppressing switching oscillation of field-effect transistor and second-order mode
A technology of field effect transistors and second-order models, applied in the direction of high-efficiency power electronic conversion, output power conversion devices, electrical components, etc., can solve problems such as oscillation and damage to electronic devices, and achieve the effect of high efficiency and suppression control methods
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Embodiment 1
[0051] The typical double-pulse test circuit of the field effect transistor switching loop in the embodiment of the present invention is applied to a silicon carbide MOSFET, such as figure 1 as shown, figure 1 It is a typical double-pulse test circuit diagram of an existing field effect transistor switch circuit.
[0052] The field effect transistor switching loop includes a first power supply V DC , and the first power supply V DC The parasitic inductance L of the positive connection loop , and parasitic inductance L loop The connected diode D, the field effect transistor MOSFET connected to the anode of the diode D, and the drive resistor R connected to the gate of the field effect transistor MOSFET G and with drive resistor R G Connect the driver power supply V GS , drive power V GS with the first power supply V DC The negative pole of the diode D is connected in parallel with the first capacitor C J .
[0053] The gate of the field effect transistor MOSFET and th...
Embodiment 2
[0100] In addition, due to the high switching speed requirements of the field effect transistor application, the time requirement for the field effect transistor to be turned on or off, so according to the damping coefficient ξ 1 or / and ξ 2 Adjust the drive resistor R G . Such as Figure 5 as shown, Figure 5 It is a flow chart of the steps of the control method for suppressing the switching oscillation of the field effect transistor described in the embodiment of the present invention. The invention provides a control method for suppressing switching oscillation of a field effect transistor, comprising the following steps:
[0101] S1. Obtain the second-order model of the field effect transistor switching circuit;
[0102] S2. According to the second-order model, obtain the damping coefficient with the least time required in the turn-on and turn-off process in the second-order model of the field effect transistor switch circuit;
[0103] S3. Comparing the obtained dampi...
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