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Ultraviolet light-emitting diode with ultrathin aluminum-indium-nitrogen insertion layer and preparation method thereof

A technology of light-emitting diodes and insertion layers, which is applied to electrical components, circuits, semiconductor devices, etc., to achieve the effects of improving luminous efficiency, reducing energy band bending, and suppressing electron leakage

Pending Publication Date: 2020-02-04
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the photoelectric conversion efficiency of ultraviolet light-emitting diodes with a wavelength above 385nm, it is significantly improved compared with short wavelengths, but the output power is only 15% of the input power

Method used

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  • Ultraviolet light-emitting diode with ultrathin aluminum-indium-nitrogen insertion layer and preparation method thereof
  • Ultraviolet light-emitting diode with ultrathin aluminum-indium-nitrogen insertion layer and preparation method thereof
  • Ultraviolet light-emitting diode with ultrathin aluminum-indium-nitrogen insertion layer and preparation method thereof

Examples

Experimental program
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no. 1 example

[0040] see figure 1 , the present embodiment provides an ultraviolet light-emitting diode 100 with an ultra-thin AlInN insertion layer, the ultraviolet light-emitting diode 100 includes a substrate 110 and a low-temperature buffer layer 120 and a high-temperature layer grown sequentially on the substrate 110 130 , n-type AlGaN layer 140 , light emitting active region 150 , insertion layer 160 , p-type AlGaN electron blocking layer 170 , p-type AlGaN layer 180 and contact layer 190 .

[0041]First, the substrate 110 can be made of sapphire; then, the low-temperature buffer layer 120 can be made of GaN or AlN, and the low-temperature buffer layer 120 can be epitaxially grown by magnetron sputtering or MOCVD; then, on the low-temperature buffer layer 120 The high-temperature layer 130 and the n-type AlGaN layer 140 are grown sequentially, wherein the thickness range of the n-type AlGaN layer 140 can be: 500nm-5000nm, and the silicon doping concentration is 1e17 / cm 3 ~1e20 / cm 3 ...

no. 2 example

[0049] This embodiment provides an ultraviolet light emitting diode 100, which is similar in structure to the first embodiment, except that the insertion layer 160 in this embodiment is doped with a small amount of Mg.

[0050] In the process of growing the insertion layer 160 on the last quantum barrier layer in the light-emitting active region 150, the insertion layer 160 with a wide bandgap is obtained by adjusting the Al flow rate and the In flow rate, and is doped with a small amount of Mg, and the Mg doping concentration Less than 1E19 / cm 3 , and the doping concentration of Mg increases gradually along the growth direction.

[0051] Doping the insertion layer 160 with a small amount of Mg can make the concentration of thermally activated holes higher, avoiding insufficient hole injection, thereby reducing the leakage of electrons from the light-emitting active region 150 to the p-type region, and further improving the quantum efficiency and luminous efficiency .

no. 3 example

[0053] see figure 2 , this embodiment provides a method for manufacturing the ultraviolet light emitting diode 100, which is mainly used to prepare the ultraviolet light emitting diode 100 provided in the first embodiment or the second embodiment.

[0054] The preparation method of the ultraviolet light emitting diode 100 specifically includes the following steps:

[0055] S1: see image 3 , a low-temperature buffer layer 120 , a high-temperature layer 130 , and an n-type AlGaN layer 140 are grown sequentially on a substrate 110 .

[0056] First, the substrate 110 can be made of sapphire; then, the low-temperature buffer layer 120 can be made of GaN or AlN, and the low-temperature buffer layer 120 can be epitaxially grown by magnetron sputtering or MOCVD; finally, on the low-temperature buffer layer 120 The high-temperature layer 130 and the n-type AlGaN layer 140 are grown sequentially, wherein the thickness range of the n-type AlGaN layer 140 can be: 500nm-5000nm, and the...

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Abstract

The invention provides an ultraviolet light-emitting diode with an ultrathin aluminum-indium-nitrogen insertion layer and a preparation method thereof, and relates to the technical field of semiconductors. The ultraviolet light-emitting diode comprises a substrate and a low-temperature buffer layer, a high-temperature layer, an n-type AlGaN layer, a light-emitting active region, an insertion layer, a p-type AlGaN electron barrier layer, a p-type AlGaN layer and a contact layer which sequentially grow on the substrate, wherein the insertion layer is made of aluminum indium nitrogen. The ultraviolet light-emitting diode can prevent electrons from diffusing to the P layer as much as possible, ensures that holes can be efficiently injected into a quantum well, and improves the light emitting efficiency of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an ultraviolet light-emitting diode with an ultra-thin aluminum indium nitrogen insertion layer and a preparation method thereof. Background technique [0002] At present, because ultraviolet light-emitting diodes have the advantages of environmental protection and non-toxicity, low power consumption, small size and long life, they meet the requirements of environmental protection and energy saving in the new era. It has important application value in the fields of ultraviolet curing, air and water purification, biomedicine, high-density storage, safe and secure communication, etc. [0003] The primary problem facing UV LED technology is its low light efficiency. The output power of the ultraviolet light-emitting diode with a wavelength of 365nm is only 5%-8% of the input power. For the photoelectric conversion efficiency of the ultraviolet light emitting diode with a wa...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/32H01L33/14H01L33/06
CPCH01L33/44H01L33/145H01L33/32H01L33/06
Inventor 贺龙飞赵维张康何晨光吴华龙刘宁炀陈志涛
Owner GUANGDONG INST OF SEMICON IND TECH
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