Carbon-based perovskite solar cell based on multifunctional interface modification layer
An interface modification layer, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of interface contact and recombination, non-radiative recombination of light absorbing layer, instability, etc., and achieve high power conversion efficiency and good stability. , the effect of high repetition rate
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Embodiment 1
[0034] 1) Preparation of electron transport layer:
[0035] 15wt.% SnO 2 The colloidal dispersion was diluted to 2.67wt.%, and coated on clean ITO conductive glass by spin coating, and a dense layer of SnO was formed after annealing at 150°C for 30min. 2 Thin film (30nm thickness).
[0036] 2) Preparation of alkali metal hydroxide layer:
[0037] Dissolve KOH powder (>99.99%) in deionized water and prepare a 20mM aqueous solution. After stirring for 1-2h, take 60uL and spin-coat the SnO in step 1). 2 On the film, a dense KOH film (5nm thickness) was formed after annealing at 100°C for 10 minutes.
[0038] 3) Preparation of perovskite layer:
[0039] Add cesium bromide and lead iodide into DMSO at a molar ratio of 1:1, stir for 1 h, and prepare a perovskite solution with a molar content of 1.0. After stirring for 12 h at room temperature, a clear and transparent yellow perovskite precursor solution was obtained. In the glove box, take 50uL precursor solution and adopt one...
Embodiment 2
[0047] Example 2 of the present invention is basically the same as Example 1, except that KOH is replaced by NaOH.
[0048] 1) Preparation of electron transport layer:
[0049] 15wt.% SnO 2 The colloidal dispersion was diluted to 2.67wt.%, and coated on a clean FTO conductive glass by spin coating, and a dense layer of SnO was formed after annealing at 150°C for 30 minutes. 2 film.
[0050] 2) Preparation of alkali metal hydroxide layer:
[0051] Dissolve NaOH powder (>99.99%) in deionized water to prepare a 10mM aqueous solution. After stirring for 1-2h, take 60uL and spin-coat the SnO in step 1). 2 On the film, a dense NaOH film was formed after annealing at 100°C for 10 min.
[0052] 3) Preparation of perovskite layer:
[0053] Add cesium bromide and lead iodide into DMSO at a molar ratio of 1:1, stir for 1 h, and prepare a perovskite solution with a molar content of 0.8. After stirring for 12 h at room temperature, a clear and transparent yellow perovskite precursor ...
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