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Periodic stripe domain structure of ferroelectric thin film and method for characterizing same

A ferroelectric thin film, periodic technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problem of not conducting more detailed analysis, and achieve the effect of large polarization value and good ferroelectricity

Active Publication Date: 2019-12-31
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In ferroelectric materials, the piezoelectric effect is a direct evidence of the existence of ferroelectric polarization; therefore, piezoelectric force microscopy (PFM) based on scanning probe microscopy (SPM) is an inseparable tool for studying polarization distribution at the nanoscale. Indispensable tool, the vector PFM characterization and analysis method developed from it can reorganize the three-dimensional polarization distribution of ferroelectric domains; for periodic strip domains, most of the relevant literatures currently give the Schematic diagram without a more detailed analysis

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  • Periodic stripe domain structure of ferroelectric thin film and method for characterizing same
  • Periodic stripe domain structure of ferroelectric thin film and method for characterizing same
  • Periodic stripe domain structure of ferroelectric thin film and method for characterizing same

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Embodiment 1

[0041] like Figure 1-8 as shown, figure 1 It is a schematic flowchart of a periodic striped domain structure of a ferroelectric thin film and a characterization method thereof in the present invention. The operation and implementation parameters of using the PLD method to prepare the BFO thin film have been described in detail in the summary of the invention and the specific implementation manner. Combine below Figure 2-8 , describe this embodiment in detail.

[0042] (1) According to step S2, phase characterization of film samples, please refer to Figure 2-4 .

[0043] figure 2 : X-ray θ-2θ scanning results of thin film samples, (a) is the result of wide range angle scanning, (b) is the enlarged view of 45°-47° range scanning results, where the DSO peak intensity exceeds the range, (c) is Enlarged view of the scanning results in the range of 70°-73°; one is to confirm the structure of the sample as DSO / SRO / BFO; The phase structure is close.

[0044] image 3 : AF...

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PUM

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Abstract

The invention discloses a periodic stripe domain structure of a ferroelectric thin film and a method for characterizing the same and belongs to the technical field of micro-nano characterization. Themethod includes the following steps: preparing a bismuth ferrite thin film by pulsed laser deposition; characterizing the lattice constant of the bismuth ferrite thin film by an X-ray diffraction instrument, determining the bismuth ferrite thin film to be a rhombus phase structure, confirming good ferroelectricity and coercive voltage of the bismuth ferrite thin film by a piezoelectric butterfly curve, and characterizing the shape of the bismuth ferrite thin film by atomic force microscopy; characterizing the periodic stripe domain in the nano-ferroelectric thin film by vector piezoresponse force microscopy, and determining the three-dimensional structure of the ferroelectric thin film by a fine vector piezoelectric microscopy analytical method; and observing the conduction of the domain wall of the stripe domain by using conductive atomic force microscopy. The method for preparing the ferroelectric thin film provided by the present invention can be used for a nonvolatile and high-density ferroelectric random access memory. Further, the provided characterization method can accurately provide the three-dimensional domain structure and the domain wall conduction of the periodic stripe domain, and provides a solution for the development of high-density ferroelectric memory devices and characterization detection.

Description

technical field [0001] The invention relates to the technical field of micro-nano characterization, in particular to a periodic striped domain structure of a ferroelectric thin film and a characterization method thereof. Background technique [0002] Ferroelectric random access memory has the advantages of low energy consumption, fast writing, and much larger erasing times, and is expected to become the next generation of non-volatile memory. Ferroelectric storage requires ferroelectric materials to have a large polarization value and strong piezoelectric response at room temperature, which is conducive to the development and detection of devices based on ferroelectric materials. Among them, bismuth ferrite (BiFeO 3 , abbreviated as BFO) the Curie temperature and Neel temperature of this material are 370 ° C and 830 ° C, respectively, with antiferromagnetic and ferroelectric properties, and the remanent polarization values ​​​​in the (111) and (001) directions are 100 μC / ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11507H10B53/30
CPCH10B53/30
Inventor 翟俊杰李忠文南峰李冠男周舟黄煜焱
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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