A chemical vapor deposition system, gas supply device and gas supply method

A technology of chemical vapor deposition and gas supply equipment, which is applied in pipeline systems, gas/liquid distribution and storage, mechanical equipment, etc., and can solve problems affecting product performance, unstable gas supply, and low saturated steam

Active Publication Date: 2021-09-14
安徽光智科技有限公司
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Toxic gases are generally used in the production process of these products, and the saturated steam of these toxic gases is relatively low, resulting in unstable gas supply during the production process and affecting the performance of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chemical vapor deposition system, gas supply device and gas supply method
  • A chemical vapor deposition system, gas supply device and gas supply method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A gas supply device of a chemical vapor deposition system as an embodiment of the present invention, such as figure 1 As shown, the gas supply device includes a terminal main pipe 1, a first gas supply pipeline 2 and a spare gas supply pipeline 3;

[0042] The terminal main pipe 1 is connected with the vacuum furnace body pipeline of the chemical vapor deposition system, the terminal main pipe 1 is connected with the first gas supply pipeline 2 pipelines, and the terminal main pipe 1 is connected with the standby gas supply pipeline 3 pipelines;

[0043] The first gas supply line 2 includes a mixed gas supply branch line, a process gas supply branch line, a gas mixing tank 5 and a sixth electromagnetic pneumatic valve 4, the mixed gas supply branch line communicates with the gas mixing tank 5, and the process gas supply branch line It communicates with the gas mixing tank 5, and the sixth electromagnetic pneumatic valve 4 is connected between the gas mixing tank 4 and t...

Embodiment 2

[0054] As a kind of chemical vapor deposition system of the embodiment of the present invention, such as figure 1 As shown, the chemical vapor deposition system includes the gas supply device of the chemical vapor deposition system described in Embodiment 1, a vacuum furnace body 25 communicated with the gas supply device pipeline, a filter 26, a spray tower 28 and Dust collection bucket 27;

[0055] The vacuum furnace body 25 is provided with an exhaust port, the exhaust port communicates with the filter 26 pipeline, the filter 26 communicates with the spray tower 28 pipeline, and the filter 26 communicates with the dust collection bucket 27 .

Embodiment 3

[0057] As a gas supply method for a chemical vapor deposition system according to an embodiment of the present invention, the method includes the following steps:

[0058] (1) install the chemical vapor deposition system as described in embodiment 2;

[0059] (2) Close the fifth electromagnetic pneumatic valve, open the second electromagnetic pneumatic valve, the second pressure transmitter, the first electromagnetic pneumatic valve, the first pressure transmitter, and the fourth electromagnetic pneumatic valve, and close the third electromagnetic pneumatic valve , outputting the gas in the first purge gas storage container for purging;

[0060] (3) Close the first electromagnetic pneumatic valve, open the third electromagnetic pneumatic valve, and output the gas in the second purge gas storage container for purging;

[0061] (4) Repeat step (2) and step (3) 50 times in turn;

[0062] (5) Turn on the vacuum pump of the vacuum furnace body for vacuuming, close the third elect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chemical vapor deposition system, a gas supply device and a gas supply method, the gas supply device includes a terminal main pipe, a first gas supply pipeline and at least one spare gas supply pipeline; the first gas supply pipeline includes a mixed gas supply Branch line, process gas supply branch line, gas mixing container and sixth electromagnetic pneumatic valve, process gas supply branch line includes process gas storage container, high-purity filter, fourth electromagnetic pneumatic valve, fifth electromagnetic pneumatic valve, third pressure transmitter , a first mass flow meter, a first purge gas pipeline and a second purge gas pipeline; the spare gas supply pipeline is the same as the first gas supply pipeline. The gas supply device of the chemical vapor deposition system of the present invention can realize on-line switching and stable, safe and continuous gas supply, and ensure the stability of process gas supply during the chemical vapor deposition process.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a chemical vapor deposition system, a gas supply device and a gas supply method. Background technique [0002] The chemical vapor deposition method is a method in which gaseous substances are used to undergo a chemical reaction under vacuum and high temperature, and are deposited on a solid substrate to form a product. At present, it is widely used in the field of infrared material preparation, such as the production of zinc selenide, zinc sulfide, diamond film, etc., and the field of ceramic material preparation, such as boron nitride, silicon carbide, etc. Toxic gases are generally used in the production process of these products, and the saturated steam of these toxic gases is also relatively low, resulting in unstable gas supply during the production process and affecting the performance of the product. Contents of the invention [0003] The o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): F17D1/04F17D3/01
CPCF17D1/04F17D3/01Y02E60/34
Inventor 于金凤朱刘
Owner 安徽光智科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap