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A kind of preparation method of high transmittance buffer layer structure for transparent electrode of laminated battery

A transparent electrode, high transmittance technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of poor light transmittance of thin-layer metal, complicated preparation of silver nanowires, poor repeatability, etc., and achieves many and simple deposition methods. , Protect the transparent organic interface layer, a variety of effects

Active Publication Date: 2022-08-05
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Transparent electrodes are the key to high-efficiency stacked batteries. Among the materials reported as transparent electrodes, the preparation of silver nanowires is complicated and poorly reproducible. The carbon-based network structure has high electrical resistance, and the light transmission of thin-layer metals is poor.

Method used

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  • A kind of preparation method of high transmittance buffer layer structure for transparent electrode of laminated battery
  • A kind of preparation method of high transmittance buffer layer structure for transparent electrode of laminated battery
  • A kind of preparation method of high transmittance buffer layer structure for transparent electrode of laminated battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Ag is generated by in situ chemical reaction 2 MoO 4 Preparation of perovskite transparent cells as a buffer layer.

[0030] (1) The commercially purchased indium tin oxide (ITO) glass was first cleaned with detergent, and then ultrasonically cleaned with tap water, deionized water, ethanol, acetone, and isopropanol in sequence.

[0031] (2) After drying the ITO, spin-coat a 30 nm-thick hole transport layer NiO for use.

[0032] (3) Preparation of 250 nm thick CH on the NiO layer 3 NH 3 PbCl 0.2 I 2.8 perovskite layer.

[0033] (4) In vacuum (-4 Pa) Evaporation at 40 nm C 60 as the electron transport layer, after C 60 10 nm BCP was evaporated on top as a barrier layer.

[0034] (5) On BCP, in vacuum (-4 In the Pa) environment, 1 nm Ag was first evaporated, and the evaporation current was 35A. Then 3 nm MoO was evaporated on Ag 3 , the evaporation temperature is 450~550℃, and the current is 1.8~2.6A. in high vacuum (-4 Pa) and high temperature (>100 °C), Ag a...

Embodiment 2

[0039] Ag is generated by in situ chemical reaction 2 MoO 4 Preparation of perovskite transparent cells as a buffer layer.

[0040] (1) The commercially purchased indium tin oxide (ITO) glass was first cleaned with detergent, and then ultrasonically cleaned with tap water, deionized water, ethanol, acetone, and isopropanol in sequence.

[0041] (2) After drying the ITO, spin-coat a 30 nm-thick hole transport layer NiO for use.

[0042] (3) Preparation of 250 nm thick CH on the NiO layer 3 NH 3 PbCl 0.2 I 2.8 perovskite layer.

[0043] (4) In vacuum (-4 Pa) Evaporation at 40 nm C 60 as the electron transport layer, after C 60 10 nm BCP was evaporated on top as a barrier layer.

[0044] (5) On BCP, in vacuum (-4 In the Pa) environment, 3 nm Ag was first evaporated, and the evaporation current was 40A. Then 1 nm MoO was evaporated on Ag 3 , the evaporation temperature is 450 ℃, and the current is 2A. in high vacuum (-4 Pa) and high temperature (>100℃), Ag atoms deposi...

Embodiment 3

[0048] Ag is generated by in situ chemical reaction 2 MoO 4 Preparation of perovskite transparent cells as a buffer layer.

[0049] (1) The commercially purchased indium tin oxide (ITO) glass was first cleaned with detergent, and then ultrasonically cleaned with tap water, deionized water, ethanol, acetone, and isopropanol in sequence.

[0050] (2) After drying the ITO, spin-coat a 30 nm-thick hole transport layer NiO for use.

[0051] (3) Preparation of 250 nm thick CH on the NiO layer 3 NH 3 PbCl 0.2 I 2.8 perovskite layer.

[0052] (4) In vacuum (-4 Pa) Evaporation at 40 nm C 60 as the electron transport layer, after C 60 10 nm BCP was evaporated on top as a barrier layer.

[0053] (5) On BCP, in vacuum (-4 In the Pa) environment, 5 nm Ag was first evaporated, and the evaporation current was 45 A. Then 20nm MoO was evaporated on Ag 3 , the evaporation temperature is 450~600 ℃, and the current is 2~3 A. in high vacuum (-4 Pa) and high temperature (>100 °C), Ag at...

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Abstract

The present invention discloses a preparation method for the high pass rate buffer structure for stacking battery transparent electrodes. It directly deposits AG on the organic interface layer of the transparent battery 2 Moo 4 As a buffer layer, deposit AG 2 Moo 4 The method includes: spinning AG 2 Moo 4 Disted liquid, steamed plating AG 2 Moo 4 Powder and in -situ chemical reactions are generated; the buffer layer material has a wide range of sources, many types, many deposition methods, and high -sedimentary methods.Layer material.

Description

technical field [0001] The invention belongs to the technical field of chemical batteries, and particularly relates to a preparation method of a high transmittance buffer layer structure used for a transparent electrode of a laminated battery. Background technique [0002] The photoelectric conversion efficiency (PCE) of perovskite solar cells has exceeded 23% due to strong light absorption properties, long carrier lifetime, and high carrier mobility. The wide tunable band gap of perovskites makes them ideal materials for the fabrication of tandem batteries. Silicon (Si), copper indium selenide (CIS) and copper indium gallium selenide (CIGS) are ideal bottom cell materials. The highest recently reported perovskite / silicon tandem cell has an efficiency of 28%, and the perovskite / copper indium gallium selenide tandem cell also achieves 25.9%. Transparent electrodes are the key to high-efficiency tandem batteries. Among the reported materials for transparent electrodes, silve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/10H10K30/82Y02E10/549
Inventor 辛颢王子龙闫伟博鲁迪龚元才
Owner NANJING UNIV OF POSTS & TELECOMM
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