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Reverse bias type silicon light-emitting SOI optoelectronic isolator, integrated circuit thereof and manufacturing method

A technology of photoelectric isolator and manufacturing method, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve the problems of high manufacturing cost, increased manufacturing difficulty, and difficult dispensing and spot welding processes

Active Publication Date: 2019-11-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA +8
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the reduction of package size, the dispensing and spot welding process is more difficult, the manufacturing difficulty is increased, and the manufacturing cost is extremely high

Method used

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  • Reverse bias type silicon light-emitting SOI optoelectronic isolator, integrated circuit thereof and manufacturing method
  • Reverse bias type silicon light-emitting SOI optoelectronic isolator, integrated circuit thereof and manufacturing method
  • Reverse bias type silicon light-emitting SOI optoelectronic isolator, integrated circuit thereof and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Example 1 A reverse-biased silicon light-emitting SOI photoelectric isolator

[0071] like Figure 1-Figure 3 As shown, this embodiment includes n - Doped first substrate 1, as SiO 2 The first dielectric layer 2 and the top layer of silicon 3 in the middle layer, the first substrate 1 and the top layer of silicon 3 are bonded by intelligent lift-off technology; The detector, the first dielectric layer 2 and the silicon light source fabricated in the top layer of silicon 3; the first substrate 1 is n - doping / p - A doped silicon substrate, the first substrate 1 is implanted with a first deep p-well 5 and connected with the first deep p-well 5 to form a first island with a first high aspect ratio p + Well 6 and the second high aspect ratio p + Well 7, the upper part of the first island is embedded with a first thin n + well 4; silicon photodetector cathode 8 from the first high aspect ratio p + Well 6 lead out, silicon photodetector anode 9 from the first thin n +...

Embodiment 2

[0076] Example 2 A reverse-biased silicon light-emitting SOI photoelectric isolator

[0077] The difference between this embodiment and embodiment 1 is that, as Figure 4 and Figure 5 As shown, the top layer of silicon 3 is a p-type doped silicon film, and the top layer of silicon 3 is embedded with seven spaced and interconnected n + The well consists of a zigzag n + well, sawtooth n + The well divides the p-type doped silicon film into eight inner zigzag p-wells that are spaced apart and communicated with each other.

[0078] from zigzag n + The positive electrode 12 of the light source is drawn from the well, and the negative electrode 15 of the light source is drawn from the inner zigzag p-well; Figure 4 and Figure 5 The wiring method of the silicon light source is given.

[0079] In fact, n + The number of wells can be determined according to actual needs. In this embodiment, seven wells are taken as an example for illustration.

Embodiment 3

[0080] Example 3 A manufacturing method of a reverse-biased silicon light-emitting SOI opto-isolator

[0081] This embodiment is used to make embodiment 1, and proceeds according to the following steps:

[0082] One, choose n - doping / p - The doped first silicon wafer is used as the first substrate 1. After the surface of the first substrate 1 is cleaned, the first deep p-well is sequentially completed on the first substrate 1 by means of a mask plate using an ion implantation process. 5. The first high aspect ratio p + Well 6, the second high aspect ratio p + The manufacture of the well 7 forms the first island, and then embeds the first thin n on the upper part of the first island + Well 4;

[0083] 2. Growth of the first SiO with a thickness of 300nm-500nm on the first substrate 1 by the low-pressure chemical vapor deposition method 2 Layer, in order to play the role of electrical isolation;

[0084] 3. Select the second silicon wafer, and implant H into the second s...

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Abstract

The invention discloses a reverse bias type silicon light-emitting SOI optoelectronic isolator which comprises a first substrate serving as substrate silicon, a first dielectric layer serving as a SiO2 middle layer and top-layer silicon, and the first substrate and the top-layer silicon are bonded through an intelligent stripping technology. The reverse biased silicon light-emitting SOI optoelectronic isolator comprises a silicon optical detector manufactured in the first substrate, the first dielectric layer and the silicon light source manufactured in top silicon. The invention further discloses a manufacturing method of the optoelectronic isolator, and further discloses an integrated circuit of the reverse bias type silicon light-emitting SOI optoelectronic isolator and a manufacturingmethod of the integrated circuit of the reverse bias type silicon light-emitting SOI optoelectronic isolator. According to the invention, the silicon light source and the silicon optical detector areaxially arranged, the area is small, the manufacturing cost is low, and the optical transmission efficiency and the integration level are high; the optoelectronic isolator and the circuit can be integrated on the same substrate, the silicon light source and the silicon optical detector are stacked in the axial direction, the manufacturing cost is further reduced, the integration degree is high, and the optoelectronic isolator is suitable for the technical field of optoelectronic isolator integration.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a photoelectric isolator, in particular to a reverse-biased silicon light-emitting SOI photoelectric isolator, an integrated circuit and a manufacturing method thereof. Background technique [0002] An opto-isolator is an important optoelectronic device that can send signals from one circuit to another, using light instead of wires, using light-emitting diodes (LEDs) to convert electrical signals into optical signals, and then using photodetectors to receive the optical signals and This is converted into an electrical signal. Photoelectric isolators have the advantages of strong anti-interference ability, good reliability, and electrical isolation, and are widely used in circuits such as logic switches and digital-to-analog conversions. [0003] With the development of the electronic information industry, electronic equipment terminals are developing toward m...

Claims

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Application Information

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IPC IPC(8): H01L31/173H01L31/18
CPCH01L31/173H01L31/1804Y02P70/50
Inventor 黄磊孙宏亮徐开凯赵建明施宝球范洋洪继霖钱津超李建全曾尚文李洪贞廖楠徐银森黄平刘继芝陈勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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