Reverse conduction field cut-off type IGBT (Insulated Gate Bipolar Transistor) and manufacturing method thereof

Abstract

The invention provides a reverse conduction field cut-off type IGBT (Insulated Gate Bipolar Transistor). The reverse conduction field cut-off type IGBT comprises a substrate; the substrate is a P-typesubstrate; the back face of the P-type substrate is provided with a collector; the front face of the P-type substrate is provided with an electric field termination layer; one surface of the electricfield termination layer, which is far away from the P-type substrate, is provided with a drift region; P-type field limiting rings are arranged in the drift region; a plurality of P-type field limiting rings are provided; a field oxide layer and an oxide dielectric layer are arranged on the field limiting rings; P wells are formed in the front surface of the P-type substrate; N type emitters arearranged in the P wells; and the oxide dielectric layer is covered with a passivation layer. According to the reverse conduction field cut-off type IGBT provided by the invention, a manufacturing process is adjusted, and the service lives of carriers are prolonged; and therefore, the reverse conduction field cut-off IGBT has a high switching speed.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a reverse conduction field stop type IGBT and a manufacturing method thereof. Background technique [0002] IGBT, also known as insulated gate bipolar transistor, is a composite fully controlled-voltage-driven-power semiconductor device composed of bipolar transistors and insulated gate field effect transistors. It has both the high input impedance of MOSFET and the low conductance of BJT. Advantages in terms of pressure drop. It is widely used in DC 600V and above conversion systems such as AC motors, inverters, lighting circuits, and traction drives. [0003] The reverse-conducting insulated gate bipolar transistor is a new type of IGBT device with international foresight. It integrates the traditional FRD packaged in anti-parallel with the IGBT chip. FRD is also called a fast recovery diode and is integrated with the IGBT on the same chip. , improve the power d...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the switching speed of the existing reverse conduction IGBT is generally slow, the present invention now provides a reverse conduction field stop type IGBT and a manufacturing method thereof, wherein a reverse conduction field stop type IGBT includes a lining The bottom; the substrate is a P-type substrate; the back of the P-type substrate is provided with a collector; the front of the P-type substrate is provided with an electric field termination layer; the electric field termination layer is away from the P-type substrate A drift area is provided on one side of the bottom; a P-type field limiting ring is provided in the drift area, and a plurality of field limiting rings are provided; a field oxide layer and an oxide dielectric layer are provided on the field limiting ring;

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