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High-brightness graphic composite substrate and manufacturing method thereof

A composite substrate and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effects of avoiding easy oxidation, improving brightness, and increasing reflection efficiency

Active Publication Date: 2019-11-12
黄山博蓝特半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the high requirements of the consumer market, the current traditional micro-nano patterned sapphire substrate is difficult to meet the requirements, so we must start from the material and structure, and adopt a new sapphire substrate preparation method to meet people's requirements

Method used

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  • High-brightness graphic composite substrate and manufacturing method thereof
  • High-brightness graphic composite substrate and manufacturing method thereof
  • High-brightness graphic composite substrate and manufacturing method thereof

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Embodiment

[0030] Embodiment: a kind of high-brightness patterned composite substrate, such as Image 6 , Figure 7 As shown, a sapphire flat plate 1 is included, and a group of composite patterns are distributed on the sapphire flat plate 1, and the composite patterns include a nanosphere reflective layer 2 and SiO coated on the surface of the nanosphere reflective layer 2 2 Coating6. The nanospheres in the nanosphere reflective layer 2 are made of metal, specifically Au, Ag, Ni, Pt, Mg, Fe, Cu, Ca, Ti, Al or a mixture of several metals. The particle size is 50-500nm. In order to prevent the oxidation of metal materials and prevent the reaction with the deposition solution during deposition, the surface of the nanospheres is also coated with a layer of SiO 2 or TiO 2 . In this patterned composite substrate structure, the nanospheres form a yurt-shaped microstructure in the composite pattern, and the light can emit light after multiple reflections in the yurt structure. The chip sta...

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Abstract

The invention discloses a high-brightness graphic composite substrate and a manufacturing method thereof. The high-brightness graphic composite substrate includes a sapphire flat plate on which a group of composite graphs are distributed. The composite graph includes a nanosphere reflecting layer and a SiO2 coating covering the surface of the nanosphere reflecting layer. The preparation method mainly includes the following steps: the nanosphere reflecting layer is formed on the sapphire flat plate; a layer of SiO2 coating is deposited on the nanosphere reflecting layer; a layer of positive photoresist coating is applied to the SiO2 coating, and exposure and development are carried out to selectively remove unnecessary parts to form gel columns; and ICP etching is carried out with the gel columns and the SiO2 coating as the barrier layer, and thus, the composite substrate is prepared. The composite substrate is formed through the sapphire flat plate, the nanospheres and the Si02, the nanospheres form a yurt-like microstructure in the composite graph, and as the nanospheres are made of metal, the light refraction can be effectively reduced, the light reflection efficiency is increased, and the brightness of an LED chip on the graphic sapphire substrate is thus improved.

Description

technical field [0001] The invention relates to the field of LED substrate manufacturing, in particular to a high-brightness patterned composite substrate and a manufacturing method thereof. Background technique [0002] As we all know, PSS (patterned sapphire substrate) is in the upstream process of LED display industry and plays a vital role. It can effectively reduce the dislocation density of GaN epitaxial materials, thereby reducing the non-radiative recombination of the active region and reducing the Reverse leakage current, improve LED life and many other advantages. At present, the micro-nano patterned sapphire substrate technology is widely used. By making periodic conical patterns on the surface of the epitaxial sapphire substrate, the characteristics of the high potential energy of the conical inclined surface on the sapphire patterned substrate are used to control the growth of epitaxial growth parameters. Higher quality GaN is produced. However, with the rapid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/007H01L33/20
Inventor 李昌勋史伟言徐良刘建哲夏建白朱伟明张磊
Owner 黄山博蓝特半导体科技有限公司
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