Magnetic multilayer structure, magnetic junction device, magnetic random access memory device and auxiliary writing and direct reading method thereof
A multi-layer structure and magnetic junction technology, applied in information storage, static memory, digital memory information, etc., can solve problems such as high energy consumption and large spin polarization current
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[0059] In order to make the purpose, technical effects and technical solutions of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention; obviously, the described embodiments It is a part of the embodiment of the present invention. Based on the disclosed embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall all fall within the protection scope of the present invention.
[0060] A magnetic multilayer structure with electric field assisted magnetic free layer flipping according to an embodiment of the present invention includes: an electromagnetic layer 31 and an insulating auxiliary layer 32, which form a stacked structure; the insulating auxiliary layer 32 is provided with micro conductive path...
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