A phosphorescent sensitized fluorescent organic light emitting diode

A technology of light-emitting diodes and blue light-emitting layers, applied in organic semiconductor devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of lack of design principles and efficiency roll-off, and achieve the effect of low roll-off and high efficiency

Active Publication Date: 2021-03-30
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In comparison, the method of delayed fluorescence sensitization by phosphorescence or thermal activation is considered to be an effective method to prepare high-efficiency fluorescent OLEDs, by effectively transferring the triplet exciton energy on the sensitized molecule to the singlet state of the fluorescent molecule, and the same Achieved 100% excitonic fluorescence emission, but there are still serious problems of efficiency roll-off and lack of general design principles

Method used

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  • A phosphorescent sensitized fluorescent organic light emitting diode
  • A phosphorescent sensitized fluorescent organic light emitting diode
  • A phosphorescent sensitized fluorescent organic light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of phosphorescence-sensitized fluorescent blue OLEDs (device B) of the present embodiment, at first clean 90 minutes ultrasonically to ITO conductive glass with cleaning agent, then rinse ITO conductive glass with deionized water, blow dry with nitrogen, put into oven to dry Baked for 30 minutes, then treated with ultraviolet ozone for 6 minutes, then put the ITO conductive glass into the vacuum coating machine, when the pressure of the vacuum coating system is lower than 1×10 -4 At Pa, the film deposition begins. Using a specific mask, sequentially evaporate the hole injection layer material HAT-CN, the hole transport layer material TAPC, the electron blocking layer material TCTA, and the light emitting layer material 26DCzPPy: 8wt% fac-Ir (iprpmi) on the ITO conductive glass 3: 1wt%TBPe, electron transport layer material TPBi, electron injection layer material LiF and cathode material Al. The rate and thickness of each functional layer evaporated are controlle...

Embodiment 2

[0032] A kind of phosphorescence-sensitized fluorescent OLEDs (device G) of the present embodiment, at first clean 90 minutes ultrasonically to ITO conductive glass with cleaning agent, then rinse ITO conductive glass with deionized water, blow dry with nitrogen, put into oven to bake 30 minutes, and then treated with ultraviolet ozone for 6 minutes and then put the ITO conductive glass into the vacuum coating machine. When the pressure of the vacuum coating system is lower than 1×10 -4 At Pa, the film deposition begins. Using a specific mask, on the ITO conductive glass, the hole injection layer material HAT-CN, the hole transport layer material TAPC, the electron blocking layer material TCTA and CDBP, and the light emitting layer material CDBP:PO-T2T:5wt%Ir were evaporated sequentially. (mppy) 3 : 1wt% TTPA, electron transport layer material PO-T2T, electron injection layer material LiF and cathode material Al. The rate and thickness of each functional layer evaporated ar...

Embodiment 3

[0034] A kind of phosphorescence-sensitized fluorescent OLEDs (device Y) of the present embodiment, at first clean 90 minutes ultrasonically to ITO conductive glass with cleaning agent, then rinse ITO conductive glass with deionized water, blow dry with nitrogen, put into oven to bake 30 minutes, and then treated with ultraviolet ozone for 6 minutes and then put the ITO conductive glass into the vacuum coating machine. When the pressure of the vacuum coating system is lower than 1×10 -4 At Pa, the film deposition begins. Using a specific mask, on the ITO conductive glass, the hole injection layer material HAT-CN, the hole transport layer material TAPC, the electron blocking layer material TCTA and mCBP, and the light emitting layer material mCBP:PO-T2T:9wt%Ir were sequentially evaporated. (ppy) 3 : 3wt% TBRb, electron transport layer material PO-T2T, electron injection layer material liF and cathode material Al. The rate and thickness of each functional layer evaporated are...

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Abstract

The invention belongs to the field of organic light-emitting diodes, and discloses a phosphorescence-sensitized fluorescent organic light-emitting diode. The phosphorescence-sensitized fluorescent organic light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode stacked in sequence; the light-emitting layer is composed of The phosphorescent sensitizer and the host luminescent material doped with fluorescent guest are composed. The device involved in the invention adopts the method of combining phosphorescent material and fluorescent material and co-doping in the main body, realizes 100% exciton utilization rate, and makes the prepared OLEDs have the characteristics of high efficiency and low roll-off.

Description

technical field [0001] The invention belongs to the field of organic light-emitting diodes, and in particular relates to a phosphorescence-sensitized fluorescent organic light-emitting diode. Background technique [0002] Organic Light-Emitting Diodes (OLEDs) are electroluminescent devices based on organic semiconductor materials. OLEDs are considered to be a very important display and solid-state lighting technology in the future due to their advantages such as self-luminescence, high color gamut, high efficiency, ultra-thin, light weight, simple fabrication process, low cost, foldable bending, and easy large-area fabrication. At present, OLEDs have been applied in displays, mobile phone screens and digital cameras. [0003] Fluorescent OLEDs have been extensively studied due to their ultralong stability and cheap cost. However, according to the spin statistics theory, only 25% of singlet excitons in traditional fluorescent materials can emit light, so the maximum externa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K50/121H10K2101/27
Inventor 马东阁姚晶文代岩峰孙倩杨德志乔现锋陈江山
Owner SOUTH CHINA UNIV OF TECH
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