Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and electronic device

A technology of semiconductors and devices, which is applied in the field of semiconductor devices and electronic devices, can solve the problems of easy extension of cracks, chip failure, cracking of passivation layer, etc., and achieve the effects of reducing the risk of cracking, avoiding damage, and reducing edge stress

Inactive Publication Date: 2019-10-08
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During packaging, the redistribution dielectric layer shrinks at high temperature, which creates a certain stress on the passivation layer below, causing cracks in the passivation layer, and the cracks easily extend to the functional area of ​​the chip, resulting in chip failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and electronic device
  • Semiconductor device and electronic device
  • Semiconductor device and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0029] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0030] It will be understood that when an element or layer is referred t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device and an electronic device. The semiconductor device comprises a semiconductor substrate, a first redistribution dielectric layer and a second redistribution dielectric layer, wherein the semiconductor substrate comprises a main chip region, an interconnection layer is formed on the semiconductor substrate in the main chip region, and a sealing ring is formed between the main chip region and a cutting channel; the first redistribution dielectric layer is formed on the interconnection layer and the second redistribution dielectric layer is formed on the first redistribution layer; a redistribution layer electrically connected with the interconnection layer is formed in the first redistribution dielectric layer; the edge of the first redistributiondielectric layer is located above the sealing ring; and the edge of the second redistribution dielectric layer is located above the first redistribution dielectric layer. According to the semiconductor device provided in the invention, the edge stress of the redistribution dielectric layer can be reduced, the risk of cracking is reduced, and the chip can be prevented from being damaged.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and an electronic device. Background technique [0002] In the process of integrated circuit design and manufacturing, packaging is an indispensable and important part, and it is also the final stage of semiconductor integrated circuit manufacturing. With the increasingly powerful functions of integrated circuits, higher and higher performance and integration, and the emergence of new integrated circuits, packaging technology plays an increasingly important role in integrated circuit products. At the same time, as the feature size of integrated circuits reaches the nanometer level, transistors are developing towards higher density and higher clock frequency, which puts forward higher and higher requirements for the packaging of integrated circuits. [0003] During chip packaging, it is necessary to connect the pads on the top layer of the ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L21/60
CPCH01L24/03H01L24/05H01L2224/0231H01L2224/02331H01L2224/02381H01L2224/024
Inventor 陆水华费春潮陆丽辉王亚平
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products