High-gain high-power voltage transformation and combination power amplifier

Abstract

The invention discloses a high-gain high-power voltage transformation and combination power amplifier. The transformation and combination power amplifier comprises an input power distribution matchingnetwork, a first two-stage feedback amplification network, a second two-stage feedback amplification network, a third two-stage feedback amplification network, a fourth two-stage feedback amplification network and an output four-way power synthesis matching network. According to the core architecture, the first two-stage feedback amplification network, the second two-stage feedback amplificationnetwork, the third two-stage feedback amplification network and the fourth two-stage feedback amplification network are adopted; the good parasitic parameter inhibition property of the differential amplifier in the microwave frequency band is utilized, and meanwhile, the high-power and high-gain characteristics of the two-stage feedback amplifier in the microwave band are utilized to be combined with the good power synthesis characteristic of the distributed transformer network, so that the whole power amplifier obtains good high gain, high efficiency and high power output capacity.

Description

technical field [0001] The invention relates to the fields of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to a high-gain, high-power variable-voltage synthesis power amplifier applied to a transmitting module at the end of a radio-frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip circuits, its perf...

AI Technical Summary

Problems solved by technology

[0004] (1) High power and high efficiency capabilities are limited: Traditional power amplifiers use a multi-channel parallel combination structure or a distributed structure. The combination efficiency of these two structures is limited, resulting in part of the power loss in the combination network, which limits high power. , high efficiency capability

[0005] (2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common source transistor is affected by the parasitic parameters of the transistor, the gain is low when working at high frequency, and the power capability is greatly limited at the same time, so as to achieve low power consumption more difficult

[0007] ①The output impedance of the traditional multi-stage, multi-channel synthesis single-ended power amplifier adopts the multi-channel parallel combination structure, so the output synthesis network needs to achieve impedance matching with high impedance transformation ratio, which often needs to sacrifice the gain of the amplifier and reduce the power. thus limiting the high power, high efficiency capability

[0008] ② In the traditional amplifier based on the active transformer synthesis network, the amplifier unit often adopts a single-stage common-source amplifier or a Cascode amplifier, but the gain of these two amplifiers is relatively limited, and the output power is relatively low due to the limitation of a single tube

[0009] It can be seen from this that the design difficulties of high-gain and high-power amplifiers based on integrated circuit technology are: high power and high efficiency output is more difficult; There are many limitations in the amplifier of the

Images