Method for preparing sample observing orientation of crystal grains in Al metallization layer of IGBT chip

Abstract

The invention discloses a method for preparing a sample observing orientation of crystal grains in an Al metallization layer of an IGBT chip. The method comprises following steps of: removing outer packaging of a high power IGBT module; removing a module bottom plate; removing silica gel on the surface of the sample; cutting the sample by using a low-speed saw in a physical manner; polishing the sample by using a metallographic grinding and polishing machine; processing the sample by using a focused ion beam; and observing the sample by using an electron back-scattered diffraction technology.The preparation method has the advantage of preparing the sample observing orientation of crystal grains on a cross section of an Al metallization layer of the high power IGBT chip, is simple and feasible, can observe orientation of crystal grains on the cross section of the Al metallization layer of the high power IGBT chip.

Description

technical field [0001] The invention relates to the observation technology of the microstructure of materials, in particular to a sample preparation method for observing the grain direction of the Al metallization in the IGBT chip. Background technique [0002] At present, after completing the power cycle test or temperature cycle test of the high-power IGBT module, in order to observe the crystal orientation of the crystal grains in the Al metallization layer of the high-power IGBT chip subjected to different cycles, the current method is to use X-ray diffraction (XRD, X-ray diffraction) The crystal orientation test is performed on the Al metallization layer of the high-power IGBT chip. Compared with the EBSD technology, the XRD technology cannot obtain the crystal orientation of each crystal grain and the orientation difference between crystal grains. As the power cycle experiment or temperature cycle experiment proceeds, the Al metallization layer gradually becomes rough,...

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Problems solved by technology

[0002] At present, after completing the power cycle test or temperature cycle test of the high-power IGBT module, in order to observe the crystal orientation of the crystal grains in the Al metallization layer of the high-power IGBT chip subjected to different cycles, the current method is to use X-ray diffraction (XRD, X-ray diffraction) is used to test the crystal orientation of the Al metallization layer of the high-power IGBT chip. Compared with the EBSD technology, the XRD technology cannot obtain the crystal orientation of each grain and the orientation difference between the grains

As the power cycle test or temperature cycle test proceeds, the Al metallization layer gradually becomes rough, so it is impossible to observe the Al metallization layer on the surface of the high-power IGBT chip after the cycle test by EBSD technology

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