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Landfill type electrode structure suitable for surface acoustic wave device

A surface acoustic wave device and electrode structure technology, applied to electrical components, impedance networks, etc., can solve problems that cannot be used in high temperature environments, melting and recondensation, long-term operation of electrodes, etc., to increase stable working time and improve reflection coefficient and electromechanical coupling coefficient, the effect of improving pressure sensitivity

Pending Publication Date: 2019-09-06
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The most commonly used electrode material for SAW devices is aluminum, but the melting point of aluminum is only 660°C, so it cannot be used in high temperature environments
Some metals with high melting point, such as platinum, will melt and re-condense when they are sputtered into thin-film electrodes, and their thickness is on the order of hundreds of nanometers after being sputtered into thin-film electrodes.
Recently, researchers have proposed some composite metal electrode materials, such as platinum-iridium alloy and platinum-rhodium alloy, which can work for several hours at a high temperature of about 1000°C, but the problem that the electrode cannot work at high temperature for a long time still needs to be solved urgently.

Method used

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  • Landfill type electrode structure suitable for surface acoustic wave device
  • Landfill type electrode structure suitable for surface acoustic wave device
  • Landfill type electrode structure suitable for surface acoustic wave device

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Such as image 3 As shown, a high-temperature-resistant buried electrode includes: a substrate material 1, a groove 2, and an electrode 3.

[0041] specifically:

[0042] The substrate material 1 uses piezoelectric single crystal material lanthanum gallium silicate (La 3 Ga 5 SiO 14 ), Euler angles are commonly used cuts (0°, 138.5°, 26.6°).

[0043] The grooves 2 are set at the interdigital transducer and the reflection grid to have the same depth h, the same length (the aperture lengths of the interdigital transducer and the reflection grid are respectively equal), the same width w, and the same interval p; where w =p=1.5μm, h=0.24μm.

[0044] The electrode 3 adopts a single-layer electrode, the material is metallic platinum (Pt), and the thickness l=0.3 μm.

[0045] The buried electrode disclosed in this embodiment can be used in a surface acoustic wave device operating in a high temperature environment, and can improve the degradation phenomenon of the metal thin film electr...

Embodiment 2

[0047] Such as Figure 4 As shown, a high-temperature-resistant embedded electrode includes: a substrate material 1, a groove 2, and an electrode 3.

[0048] specifically:

[0049] The substrate material 1 uses piezoelectric single crystal material lanthanum gallium silicate (La 3 Ga 5 SiO 14 ), Euler angles are commonly used cuts (0°, 90°, 0°).

[0050] The groove 2 is set at the interdigital transducer and the reflection grid to have the same depth h, the same length (the aperture lengths of the interdigital transducer and the reflection grid are respectively equal), the same width w, and the same spacing p; where w= p=1.5μm, h=0.42μm.

[0051] The electrode 3 adopts a multilayer electrode, from bottom to top: a buffer layer, an electrode layer, and a covering layer. Preferably, the material of the buffer layer is aluminum oxide (Al 2 O 3 ), thickness l 1 =0.06μm; the electrode layer material is metallic platinum (Pt), the thickness is l 2 =0.3μm; The material of the covering laye...

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Abstract

The invention provides a landfill type electrode structure suitable for a surface acoustic wave device. The landfill type electrode structure comprises a substrate, a groove and an electrode, whereinthe groove is formed in the surface of the substrate, and the electrode is arranged in the groove. The landfill type electrode structure provided by the invention can improve the degradation phenomenon of the metal film electrode at a high temperature, so that the stable working time of the electrode under a high temperature condition is prolonged; according to the landfill type electrode structure, the reflection coefficient and the electromechanical coupling coefficient of the surface acoustic wave device can be improved, the size of the surface acoustic wave device is reduced, and the bandwidth of the device is increased; for a surface acoustic wave device applied to pressure sensing, the landfill type electrode structure provided by the invention can increase the frequency pressure coefficient and improve the pressure sensitivity.

Description

Technical field [0001] The present invention relates to the technical field of surface acoustic wave devices, and in particular to a buried electrode structure suitable for surface acoustic wave devices. Background technique [0002] Surface Acoustic Wave (SAW) devices are a kind of devices that use SAW to complete various signal processing. Because of its high precision, high reliability, small size and low cost, it has been widely used in modern electronic information technologies such as communications and sensing. Especially in the field of sensing, SAW devices have attracted much attention for their multi-parameter sensitive characteristics and wireless and passive advantages. At present, the industry has successfully developed SAW temperature sensors, pressure sensors, strain sensors, humidity sensors, and gas sensors. [0003] With the rapid development of automotive, aerospace, energy and chemical industries, there is an increasing demand for high-temperature sensing techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/125
CPCH03H9/02543H03H9/02834H03H9/125
Inventor 韩韬柯汉
Owner SHANGHAI JIAO TONG UNIV
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