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High-purity SiC ceramic prepared through normal-pressure solid-phase sintering and preparing method thereof

A ceramic and high-purity technology, applied in the field of materials, can solve the problems of lower sample density, lower sintering driving force, etc., achieve the effect of reducing the content of sintering aids and reducing manufacturing costs

Pending Publication Date: 2019-09-06
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the amount of added sintering aid is directly reduced, although the residual amount of residual aid can be reduced, it will also reduce the sintering driving force, and the density of the sample may be greatly reduced.

Method used

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  • High-purity SiC ceramic prepared through normal-pressure solid-phase sintering and preparing method thereof
  • High-purity SiC ceramic prepared through normal-pressure solid-phase sintering and preparing method thereof
  • High-purity SiC ceramic prepared through normal-pressure solid-phase sintering and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of SiC slurry: Weigh 2g of boric acid (the addition of element B is 0.35wt% of the mass of ɑ-SiC powder) and 10g of D-fructose (the addition of element C is 1.8wt% of the mass of ɑ-SiC powder) , placed in a glass beaker filled with 30ml of deionized water, and heated to 80°C to prepare a mixed solution. Weigh 100g of ɑ-SiC powder, 150g of absolute ethanol, 150g of SiC balls and the prepared mixed solution and place them in a nylon ball mill jar. Place the ball mill jar in a planetary ball mill for ball milling. The average particle size of the ɑ-SiC powder is 0.6 μm, the purity is 99.86%, the diameter of the SiC ball is 5 mm, the speed of the ball mill is 300 r / min, and the milling time is 24 hours;

[0042] Preparation of raw material powder: place the ball-milled ceramic slurry in an electric blast drying oven for drying, and then grind and sieve to obtain the raw material powder. The temperature of the drying oven is set at 60°C, the drying time is 6 ho...

Embodiment 2

[0051] Preparation of SiC slurry: Weigh 2.5g of boric acid (the addition of B element is 4.5wt% of the mass of ɑ-SiC powder) and 15g of D-fructose (the addition of C element is 0.26wt% of the mass of ɑ-SiC powder). ), placed in a glass beaker filled with 40ml of deionized water, and heated to 60°C to prepare a mixed solution. Weigh 100g of ɑ-SiC powder, 150g of absolute ethanol, 150g of SiC balls and the prepared mixed solution and place them in a nylon ball mill jar. Place the ball mill jar in a planetary ball mill for ball milling. The average particle size of the ɑ-SiC powder is 0.2 μm, the purity is 99.86%, the diameter of the SiC ball is 5 mm, the speed of the ball mill is 200 r / min, and the milling time is 48 hours;

[0052] Preparation of raw material powder: place the ball-milled ceramic slurry in an electric blast drying oven for drying, and then grind and sieve to obtain the raw material powder. The temperature of the drying oven is set at 60°C, the drying time is ...

Embodiment 3

[0057] Preparation of SiC slurry: Weigh 3.5g of boric acid (the addition of B element is 0.6wt% of the mass of ɑ-SiC powder) and 15g of D-fructose (the addition of C element is 2.5wt% of the mass of ɑ-SiC powder). ), placed in a glass beaker filled with 40ml of deionized water, and heated to 80°C to prepare a mixed solution. Weigh 150g of ɑ-SiC powder, 200g of absolute ethanol, 200g of SiC balls and the prepared mixed solution and place them in a nylon ball mill jar. Place the ball mill jar in a planetary ball mill for ball milling. The average particle size of the ɑ-SiC powder is 0.8 μm, the purity is 99.5%, the diameter of the SiC ball is 5 mm, the speed of the ball mill is 400 r / min, and the milling time is 24 hours;

[0058] Preparation of raw material powder: place the ball-milled ceramic slurry in an electric blast drying oven for drying, and then grind and sieve to obtain the raw material powder. The temperature of the drying oven is set at 80°C, the drying time is 4 ...

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Abstract

The invention relates to a high-purity SiC ceramic prepared through normal-pressure solid-phase sintering and a preparing method thereof. The preparing method of the high-purity SiC ceramic comprisesthe steps of 1, adding alpha-SiC powder and an aqueous solution containing a sintering aid into a solvent, and mixing the materials to obtain SiC slurry, wherein the sintering aid comprises a source Band a source C, the source B is boric acid, and the source C is selected from at least one of D-fructose and glucose; 2, drying and forming the obtained SiC slurry to obtain an SiC blank; 3, conducting vacuum debinding on the obtained SiC blank, putting the SiC blank in an inert atmosphere, and conducting sintering for 30-120 minutes at 2,050-2,250 DEG C to obtain the high-purity SiC ceramic, wherein the addition amount of the element B in the source B accounts for 0.1-1 wt% of the mass of the alpha-SiC powder, and the addition amount of the element C in the source C does not exceed 5 wt% ofthe mass of the alpha-SiC powder.

Description

technical field [0001] The invention relates to a high-purity SiC ceramic sintered in solid phase at normal pressure and a preparation method thereof, belonging to the field of materials. Background technique [0002] In China's semiconductor industry, the chip manufacturing link occupies a core position. As the country pays more attention to the semiconductor industry, a large number of fabs have established production lines in my country in recent years. According to statistics, there are more than 60 wafer foundries established in China. And it is closely related to various devices that need to be used in semiconductor processing. Among them, high-purity silicon carbide (SiC) materials occupy a relatively large proportion of the prepared devices due to their many excellent properties, such as high strength, hardness, stiffness, chemical stability, excellent oxidation resistance and wear resistance, etc. Large specific gravity. [0003] At present, SiC ceramic devices ...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/622C04B35/626C04B35/64
CPCC04B35/565C04B35/622C04B35/62605C04B35/64C04B2235/602C04B2235/6567
Inventor 杨勇刘盟黄政仁姚秀敏刘学建
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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