Method and device for massively preparing silicon nanomaterial

Abstract

The invention belongs to the technical field of nanomaterials, and relates to a method for massively preparing a silicon nanomaterial. The method comprises the following steps: a silicon-containing gas and an inert gas are input into a plasma gun, and are ionized and thermally decomposed in the plasma gun to obtain silicon ions and hydrogen ions; the silicon ions and hydrogen ions obtained throughionization and thermal decomposition enter a growth controller to afresh generate silicon nanowires and / or silicon nanoparticles; and the afresh generated silicon nanowires and / or silicon nanoparticles enter a cooling container, and are rapidly cooled and stably molded by a cooling gas released by a cooling gas ring. The invention also provides a device for massively preparing the silicon nanomaterial. The method and the device for massively preparing the silicon nanomaterial realize the industrial preparation of the silicon nanomaterial especially the silicon nanowires, and greatly reduce the manufacturing cost of the material.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and relates to a method and a device for preparing silicon nanomaterials in a large amount. Background technique [0002] The Ministry of Industry and Information Technology proposed that by 2020, the energy density of power batteries in my country should reach 300wh / kg, strive to reach 350wh / kg, and target 400wh / kg in 2022. At the same time, the manufacturing cost is less than 1 yuan per watt, so it is necessary for high-capacity lithium-ion battery materials To bring jumping battle, it must have the requirements of high initial Coulombic efficiency, high specific capacity, good cycle performance and low manufacturing cost. [0003] At present, there are still many problems in the application of domestic special crystalline silicon nanometers to lithium-ion battery materials, and at the same time meet the above four-in-one requirements (that is, the four conditions for the industrial ...

AI Technical Summary

Problems solved by technology

Its disadvantage is that when silane is ionized in a nitrogen environment, the ionized silicon ions, hydrogen ions and nitrogen ions will also pass through the plasma arc region, and its temperature is as high as 6000°C-18000°C. In this ultra-high temperature environment, silicon ions And hydrogen ions are in an ion state, silicon ions will react with nitrogen ions to form silicon nitride

None of the above methods can meet the industrial requirements for the macro-preparation of silicon nanomaterials

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