Medium wave infrared antireflection film in silicon substrate and preparation method of film
A technology of infrared anti-reflection coating and silicon substrate, which is applied in the direction of optical components, optics, instruments, etc., can solve the problems of low transmittance and unsuitability of anti-reflection coating, achieve enhanced signal strength, reduce reflection loss, and improve detector The effect of response
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[0018] The specific embodiment of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0019] see figure 1 , the mid-wave infrared anti-reflection coating of the present invention includes a silicon substrate and optical films on both sides. In the figure (1) is the front film system, (2) is the silicon substrate, and (3) is the back film system.
[0020] The spectral anti-reflection area of the mid-wave infrared anti-reflection coating of the present invention is 3-5 μm. Select suitable optical thin film materials in the required spectral range, Ge as high refractive index coating materials, ZnS and YbF3 as low refractive index coating materials.
[0021] The mid-wave infrared anti-reflection film of the present invention adopts a multi-layer irregular film structure. The coating process uses a quartz crystal oscillator to monitor the material deposition thickness in real time. The central wavelength is selected...
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