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IGBT device power cycle evaluation method based on application condition of MMC converter valve

A technology of power cycle and commutation valve, which is applied in the direction of single semiconductor device testing, instrumentation, measuring electricity, etc., can solve the problem that the reliability test of IGBT devices is difficult to accurately evaluate the operating life, and achieve the effect of improving accuracy

Active Publication Date: 2019-08-16
CHONGQING UNIV
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Problems solved by technology

[0004] Based on the above background, aiming at the problem that the reliability test of IGBT devices in the existing method is difficult to accurately evaluate its operating life under application conditions, the present invention proposes a method for evaluating the power cycle of IGBT devices based on the application conditions of MMC converter valves

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  • IGBT device power cycle evaluation method based on application condition of MMC converter valve
  • IGBT device power cycle evaluation method based on application condition of MMC converter valve
  • IGBT device power cycle evaluation method based on application condition of MMC converter valve

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[0068] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic concept of the present invention, and the following embodiments and the features in the embodiments can be combined with each other in the case of no conflict.

[0069] see Figure 1 to Figure 14 , figure 1 It is a flow chart of the reliability evaluation method for IGBT devices used in MMC converter valves, such as ...

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Abstract

The invention relates to an IGBT device power cycle evaluation method based on the application condition of an MMC converter valve, and belongs to the technical field of high-voltage direct current transmission. The method comprises the following steps: firstly, obtaining conduction loss and switching loss of a device based on a loss model of IGBT and a diode, and extracting average junction temperature and junction temperature fluctuation amplitude of the IGBT device and the diode according to a thermal network model of the IGBT device; secondly, considering the running condition of the MMC converter valve, providing a device failure rate calculation model, and acquiring the failure rate and the cycle times of the device; and finally, performing reliability evaluation modeling on the IGBTdevice based on a Miner rule and an equal damage rule, and acquiring a change rule of the reliability index of the IGBT device under different additional test conditions to form a reliability evaluation scheme. According to the invention, the IGBT device reliability evaluation method is formed, and has important significance for accurately evaluating the reliability of the IGBT device for the MMCconverter valve.

Description

technical field [0001] The invention belongs to the technical field of high-voltage direct current transmission, and relates to an IGBT device power cycle evaluation method based on the application working condition of an MMC converter valve. Background technique [0002] The large-capacity modular multilevel converter (MMC) converter valve is the main topological form of the flexible DC transmission system. The reliability of the IGBT device in the converter valve assembly directly affects the reliability of the converter valve equipment. The reliability of IGBT devices is closely related to the external stress of its key components, internal materials and electromechanical thermal stress, and the influence of operating conditions needs to be considered. However, our country started late in the research of high-voltage and high-power flexible straight equipment, the research foundation is weak, and there is a lack of research on the reliability evaluation method of IGBT dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 李辉王晓姚然龙海洋郑媚媚李金元赖伟何蓓
Owner CHONGQING UNIV
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