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A kind of qled device reinforced by composite structure and its preparation method

A composite structure and device technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as QLED light trapping, improve light-emitting capacity, overcome excessive air refractive index difference, and process simple effect

Active Publication Date: 2020-10-30
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem that the QLED light is trapped inside the QLED in the prior art, the purpose of the present invention is to provide a composite structure enhanced QLED device and its preparation method

Method used

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  • A kind of qled device reinforced by composite structure and its preparation method
  • A kind of qled device reinforced by composite structure and its preparation method
  • A kind of qled device reinforced by composite structure and its preparation method

Examples

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Effect test

Embodiment 1

[0038] A method for preparing QLEDs enhanced by a composite structure, such as figure 1 shown, including the following steps:

[0039] (1) Spin-coat PEDOT:PSS layer, TFB layer, QDs layer and ZnO layer on the ITO side of the ITO glass substrate in turn, and then evaporate Al electrodes on the ZnO layer, and use curing glue to cure the Al electrodes to obtain the encapsulated QLED devices;

[0040] (2) The IPS template is a circle with a diameter of 8 cm. Cut it into four square structures with a size of 2.5 * 2.5 cm for use. Remove the protective layer on the IPS template and attach the side with the protective layer removed to the Si Then put the IPS template and the Si master into the center of the stage of the nanoimprinting instrument, and cover a layer of UV film on the IPS template as a protective layer, send the stage above the lifting platform and then lower it hatch, start the program for the first nanoimprinting, set the temperature of the first nanoimprinting at 15...

Embodiment 2

[0063] A method for preparing QLEDs enhanced by a composite structure, such as figure 1 shown, including the following steps:

[0064] (1) Spin-coat PEDOT:PSS layer, TFB layer, QDs layer and ZnO layer on the ITO side of the ITO glass substrate in turn, and then evaporate Al electrodes on the ZnO layer, and use curing glue to cure the Al electrodes to obtain the encapsulated QLED devices;

[0065] (2) The IPS template is a circle with a diameter of 8 cm. Cut it into four square structures with a size of 2.5 * 2.5 cm for use. Remove the protective layer on the IPS template and attach the side with the protective layer removed to the Si Then put the IPS template and the Si master into the center of the stage of the nanoimprinting instrument, and cover a layer of UV film on the IPS template as a protective layer, send the stage above the lifting platform and then lower it door, start the program for the first nanoimprinting, set the temperature of the first nanoimprinting at 145...

Embodiment 3

[0079] A method for preparing QLEDs enhanced by a composite structure, such as figure 1 shown, including the following steps:

[0080] (1) Spin-coat PEDOT:PSS layer, TFB layer, QDs layer and ZnO layer on the ITO side of the ITO glass substrate in turn, and then evaporate Al electrodes on the ZnO layer, and use curing glue to cure the Al electrodes to obtain the encapsulated QLED devices;

[0081] (2) The IPS template is a circle with a diameter of 8 cm. Cut it into four square structures with a size of 2.5 * 2.5 cm for use. Remove the protective layer on the IPS template and attach the side with the protective layer removed to the Si Then put the IPS template and the Si master into the center of the stage of the nanoimprinting instrument, and cover a layer of UV film on the IPS template as a protective layer, send the stage above the lifting platform and then lower it door, start the program for the first nanoimprinting, set the temperature of the first nanoimprinting at 155...

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Abstract

The invention provides a QLED device enhanced by a composite structure and a preparation method thereof, which improves the light extraction efficiency of the positive QLED device through a micro-nano structure composite structure constructed by a nano-grid structure and a composite wrinkle structure. The construction of the composite structure is based on nano-imprint technology, micro-attachment technology and surface plasma etching technology, including the preparation of nano-imprint templates and reprocessing of transferred patterns. In the present invention, the IPS polymer is used as a template for nanoimprinting through nanoimprinting technology, and the template pattern is transferred to the PDMS dielectric layer through micro-attachment technology. The composite structure is built on top to enhance the light output of the QLED substrate. The QLED device enhanced by the composite structure of the present invention can have the highest brightness and efficiency, and the brightness and EQE are up to 46% higher than conventional devices; the construction method of the composite structure is simple and the cost is low, which is conducive to the popularization and application of industrialization.

Description

technical field [0001] The invention belongs to the field of QLED display and lighting, and in particular relates to a composite structure enhanced QLED device and a preparation method thereof. Background technique [0002] In the field of display and lighting, light-emitting diodes are one of the most important components. Although the existing OLEDs have been commercialized, they are limited by factors such as the easy decomposition of organic matter by heat and the stability and lifespan. QLED is attracting attention. A new generation of display and lighting products. At present, the external quantum efficiency of conventional QLED devices has been improved to approach the theoretical maximum value, but this value still cannot meet the needs of commercial applications. The problem of the reason is the problem of light extraction. Due to the waveguide mode, surface plasmon mode, and substrate mode caused by the internal total reflection of the QLED device, a large amount ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/854H10K50/858H10K71/00
Inventor 杜祖亮王书杰李晨冉王啊强方岩
Owner HENAN UNIVERSITY
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