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A kind of Fept-MGO magnetic recording thin film and preparation method thereof

A magnetic recording and thin-film technology, which is applied in the direction of coating with magnetic layers, disc carrier manufacturing, sputtering coating coating, etc., can solve the problem that crystal grains cannot be completely separated from each other, which is not conducive to magnetic storage density, and reduces the size of magnetic devices and other problems, to achieve the effect of free self-organized growth process, not easy to fall off, and reduce the size of the device

Active Publication Date: 2020-11-27
SOUTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The crystal grains cannot be completely separated from each other, and the coercive force is not large enough. In the application, only a sufficient number of magnetic grain clusters can be used as a whole as an application unit, resulting in additional noise, which is not conducive to improving the magnetic storage density or reducing the size of magnetic devices.

Method used

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  • A kind of Fept-MGO magnetic recording thin film and preparation method thereof
  • A kind of Fept-MGO magnetic recording thin film and preparation method thereof
  • A kind of Fept-MGO magnetic recording thin film and preparation method thereof

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Embodiment 1

[0033] Embodiment one, a kind of FePt-MgO magnetic recording thin film, by substrate, be deposited on the pad layer on described substrate and be deposited on the magnetic layer on described pad layer, described substrate is Si substrate, described pad The layer is an MgO cushion layer, and the magnetic layer includes an MgO embedding layer and an array of FePt nano-tables embedded in the MgO embedding layer. One end of the FePt nano-tables is fixed on the MgO cushion layer, and the other end protrudes from the membrane. noodle. The thickness of the MgO cushion layer is 10nm. The atomic ratio of Fe and Pt in the magnetic layer is 1:1; the thickness of the MgO embedded layer is 1-5nm.

Embodiment 2

[0034] Embodiment two, a kind of preparation method of FePt-MgO magnetic recording film, it comprises the following steps:

[0035]1) Prepare the MgO cushion layer, use the Si single crystal with the orientation of (100) as the substrate, clean it in acetone and alcohol with an ultrasonic device, and dry it with compressed air, and put the dried Si substrate into the substrate with tweezers Sample holder, the sample holder is transferred from the sampling chamber to the magnetron sputtering chamber by a robot, and a 10nm thick MgO cushion layer is deposited on the substrate by vacuum magnetron sputtering coating method; the temperature of the Si substrate during sputtering is 100°C , the background vacuum of the sputtering chamber is 2×10 -5 Pa, the argon gas pressure is 2.8Pa.

[0036] 2) Prepare the magnetic layer, and use the magnetron sputtering method to alternately sputter the FePt-MgO mixed layer and the MgO embedded layer on the MgO underlayer prepared in step 1), and...

Embodiment 3

[0039] Embodiment three, a kind of preparation method of FePt-MgO magnetic recording film, it comprises the following steps:

[0040] 1) Prepare the MgO cushion layer, use Si(100) single crystal as the substrate, clean it in acetone and alcohol with an ultrasonic device, and dry it with compressed air, put the dried Si substrate into the sample holder with tweezers, The sample holder is transferred from the sampling chamber to the magnetron sputtering chamber by a robot, and a 10nm thick MgO cushion layer is deposited on the substrate by vacuum magnetron sputtering coating method; the temperature of the Si substrate is 100°C during sputtering, and the The back vacuum of the cavity is 2×10 -5 Pa, the argon gas pressure is 2.8Pa.

[0041] 2) Prepare the magnetic layer, and use the magnetron sputtering method to alternately sputter the FePt-MgO mixed layer and the MgO embedded layer on the MgO underlayer prepared in step 1), and obtain the substrate, the MgO underlayer, the FePt...

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Abstract

The invention discloses a FePt-MgO magnetic recording film and a preparation method thereof. The magnetic recording film comprises a substrate, a cushion layer deposited on the substrate and a magnetic layer deposited on the cushion layer. The substrate is a Si substrate, the cushion layer is a MgO cushion layer, the magnetic layer comprises a MgO embedded layer and a FePt nanoplatform array embedded in the MgO embedded layer, one end of the FePt nanoplatform is fixed on the MgO cushion layer, and the other end of the FePt nanoplatform extends out of the MgO embedded layer. The coercive forceis large, the magnetic stability is good, the storage density can be improved, and the device size is reduced.

Description

technical field [0001] The invention relates to the field of magnetic materials and information storage, in particular to a FePt-MgO magnetic recording film and a preparation method thereof. Background technique [0002] In recent years, small-sized strong magnets have received attention in the fields of magnetic storage, tunnel junctions, spin valves, and high-performance film-type tiny permanent magnets. The use of magnets in sub-micron scale devices requires that the coercive force and saturation magnetization of the material be as large as possible in order to maintain magnetic stability and strong enough signals in a room temperature environment. Corrosion-resistant L1 0 The phase FePt alloy has uniaxial magnetocrystalline anisotropy, and the magnetocrystalline anisotropy energy density reaches 6.6×10 7 erg / cm 3 , the saturation magnetization is close to 1200emu / cm 3 . The superparamagnetic limit is less than 3nm, which can greatly increase the density of magnetic ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/851
CPCG11B5/851
Inventor 李国庆张浩然杨真艳谭兴文
Owner SOUTHWEST UNIV
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