Light emitting device, preparation method thereof and application

Abstract

The invention provides a light emitting device. The light emitting device comprises a base layer, an anode layer, a first hole transport layer, a second hole transport layer, a quantum rod layer, an electron transport layer and a cathode layer which are combined together sequentially from bottom to top. Through replacing a quantum dot light emitting layer in the conventional application as the quantum rod light emitting layer, the external quantum efficiency of the light emitting device can be improved; the quantum rod light emitting layer is a quantum rod layer with a fluorescence wavelengthof 500 to 700 nm, self absorption of the light emitting device can be further reduced, and the external quantum efficiency can be further increased; through using a specific ligand octadecylphosphonicacid to prepare a CdSe core quantum dot and coating the CdSe core quantum dot, fluorescence red shift to a green band, the effect of generating green can be achieved, and the external quantum efficiency of a green light emitting device can be further improved; and the light emitting device preparation method is simple, the raw material is easy to obtain, realization is easy, and wide applicationto industrial production is facilitated.

Description

technical field [0001] The invention belongs to the field of light-emitting devices, and relates to a light-emitting device and a preparation method and application thereof. Background technique [0002] Compared with the traditional liquid crystal display technology, the new quantum dot electroluminescent diode device has the advantages of wide color gamut, high efficiency, and the ability to produce flexible displays. It is very likely to replace the traditional liquid crystal display technology and become a new generation of widely used display technology . As a deformed semiconductor nanocrystal of quantum dots, quantum rods not only have all the advantages of quantum dots, but also have unique characteristics such as ultra-low self-absorption and polarized luminescence. Therefore, replacing quantum dots with quantum rods to make electroluminescent diode devices can further improve the efficiency and function of display devices. [0003] However, at present, the work o...

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Problems solved by technology

However, it is only a quantum dot with a core-shell structure, not a quantum rod structure, and cannot produce a green effect

[0005] CN106410058A discloses a method for making a quantum dot light-emitting device, which includes: providing a substrate, and making an anode on the substrate by sputtering deposition; making hole injection on the anode by suspension coating, atomization or inkjet printing process layer; by suspension coating, inkjet printing or atomization process, the hole transport layer is coated on the hole injection layer; by suspension coating, inkjet printing or atomization process, the quantum dot light-emitting layer is coated on the hole transport layer; by sputtering deposition or solution method, the IZO electron transport layer is deposited on the quantum dot light-emitting layer; and by thermal evaporation process, the cathode is made on the IZO electron transport layer to obtain the corresponding quantum dot light-emitting device; the method Preparation improves the luminous efficiency of quantum dot light-emitting devices, but its luminous efficiency still needs to be improved

The quantum dot light-emitting device includes: a first electrode and a second electrode; a quantum dot light-emitting layer located between the first electrode and the second electrode; a quantum dot light-emitting layer located between the first electrode The first hole transport layer; the hole injection layer between the first hole transport layer and the first electrode; the electron transport layer between the quantum dot light emitting layer and the second electrode and a filling layer located between the electron transport layer and the quantum dot light-emitting layer and embedded in the quantum dot light-emitting layer; the quantum dot light-emitting device provided by the invention can effectively prevent leakage, thereby reducing the current density, However, there is no mention of the ability to increase the luminous efficiency of light-emitting devices

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