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A kind of sensor and preparation method thereof

A force sensor and sensitive beam technology, applied in the field of micro-electromechanical systems, can solve problems such as limited application scenarios and unsuitable pressure sensors, and achieve the effects of expanding application scenarios, easy calibration and calibration, and easy mass production.

Active Publication Date: 2020-11-10
BEIJING INST OF COLLABORATIVE INNOVATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned piezoresistive MEMS pressure sensor has obvious defects. Its detection depends on fluid media such as gas and liquid. The actual detection is the force exerted by fluids such as gas or liquid on the silicon pressure sensitive diaphragm. The pressure of the liquid, rather than the external force itself directly acting on the silicon sensitive diaphragm, can only be applied to scenes with fluid media such as gas and liquid. When there is no gas or liquid as the medium, this type of pressure sensor will not be applicable, greatly Limit its application scenarios

Method used

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  • A kind of sensor and preparation method thereof
  • A kind of sensor and preparation method thereof
  • A kind of sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1 force sensor

[0047] refer to Figure 2a-Figure 2e and Figure 4 , this embodiment proposes a force sensor, including a MEMS force sensor chip, the force sensor chip includes a substrate 10, the upper surface of the substrate 10 has a groove 11, and the upper surface of the substrate 10 is provided with a pressure sensitive layer 20.

[0048] The pressure sensitive layer 20 includes a frame 21 and a pressure sensitive beam 22 . The frame 21 at least partially surrounds, preferably completely surrounds the groove 11, the pressure sensitive beam 22 is formed above the groove 11 through the pressure sensitive layer 20 above the hollow groove 11, and the pressure sensitive beam 22 is suspended , the lower surface of which has a certain distance from the bottom of the groove 11 , and each end of the pressure sensitive beam 22 is in contact with the frame 21 of the pressure sensitive layer 20 respectively.

[0049] The pressure sensitive beam 22 is a pressure...

Embodiment 2

[0069] The preparation method of embodiment 2 force sensor

[0070] refer to Figures 3a-3d, this embodiment proposes a method for preparing the force sensor described in Embodiment 1, comprising the following steps:

[0071] S1: Refer to Figure 3a , provide an SOI substrate having a cavity 11, the SOI substrate is composed of an SOI substrate 10 and a pressure sensitive diaphragm, thinning the pressure sensitive diaphragm to a predetermined thickness to form a pressure sensitive layer 20;

[0072] S2: Refer to Figure 3b , making piezoresistors 23 distributed axisymmetrically or centrally symmetrically at preset positions on the upper surface of the pressure sensitive layer 20, and the piezoresistors 23 are used to connect to form a Wheatstone bridge;

[0073] S3: Refer to Figure 3c , making lead holes and metal leads 224 on the pressure sensitive layer 20 based on the preset structure of the pressure sensitive beam 22 and the position of the piezoresistor 23;

[0074]...

Embodiment 3

[0088] Embodiment 3 Packaging of Force Sensor Chip

[0089] refer to Figure 4-Figure 6 , this embodiment proposes a force sensor, including a force sensor chip, a sensor chip containing body, an elastic component 40 and a pressure conducting component 50 .

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Abstract

The embodiment of the present invention relates to a force sensor and a preparation method thereof. The force sensor includes a MEMS force sensor chip, the chip includes a base, the upper surface of the base has a groove, and the upper surface of the base is provided with a pressure sensitive layer; The pressure-sensitive layer includes a frame and a pressure-sensitive beam; the frame is partially or completely arranged around the groove, the pressure-sensitive beam is arranged above the groove, and each end of the pressure-sensitive beam is respectively connected to the pressure-sensitive layer The frame is connected; the upper surface of the pressure sensitive layer is provided with a plurality of piezoresistors, at least a part of each piezoresistor is located on the pressure sensitive beam, and the multiple piezoresistors are connected to form a Wheatstone bridge . The sensor can directly detect external pressure without an intermediary, expanding application scenarios.

Description

technical field [0001] The present invention relates to the technical field of micro-electro-mechanical systems (Micro-Electro-Mechanical Systems, MEMS), more specifically, to a sensor and a preparation method thereof. Background technique [0002] MEMS pressure sensor is a semiconductor thin film element, which has the advantages of small size, light weight, high precision, high sensitivity and low cost. In the prior art, MEMS pressure sensors mainly include capacitive and piezoresistive. Among them, the piezoresistive pressure sensor forms a Wheatstone bridge ( Figure 1a is the schematic diagram of the Wheatstone bridge principle), when the external pressure acts on the silicon pressure-sensitive diaphragm, the diaphragm will be deformed, causing the silicon material lattice to compress and stretch, resulting in a change in the resistance value of the piezoresistor. Stone bridges are able to detect external pressure. [0003] Figure 1b It is a structural schematic diag...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/22B81C1/00B81B3/00
CPCB81B3/0035B81C1/0015G01L1/2287
Inventor 张威周浩楠
Owner BEIJING INST OF COLLABORATIVE INNOVATION
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