Preparation method of preferentially oriented n-type bismuth telluride-based polycrystalline bulk thermoelectric material
A bismuth telluride-based, preferred orientation technology, applied in chemical instruments and methods, selenium/tellurium compounds, metal selenides/tellurides, etc., can solve the problem that it is difficult to prepare powders with uniform particle size, and achieve dimensionless thermoelectric optimization High value, stable performance and good repeatability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0031] The preparation method of the preferred orientation n-type bismuth telluride-based polycrystalline bulk thermoelectric material provided in this example is as follows:
[0032] Using Bi, Te and Se elemental powders with a mass percentage greater than 99.99% as raw materials, according to Bi 2 Te 2.79 Se 0.21 Stoichiometric ratio ingredients;
[0033] Put the above-mentioned raw materials into a quartz glass tube or a high borosilicate glass tube and vacuum seal it, then put the sealed quartz glass tube or high borosilicate glass tube into a swing furnace for high-temperature melting, the melting temperature is 630°C, and the melting time is 5min. After the smelting is completed, the hearth of the swing furnace is rotated to a vertical position, and slowly cooled to obtain a high-density n-type bismuth telluride-based alloy ingot;
[0034] Cut the obtained n-type bismuth telluride-based alloy crystal bar into blocks, put the blocks into an equal-channel corner extrus...
Embodiment 2
[0041] The preparation method of the preferred orientation n-type bismuth telluride-based polycrystalline bulk thermoelectric material provided in this example is as follows:
[0042] Using Bi, Te and Se elemental powders with a mass percentage greater than 99.99% as raw materials, according to Bi 2 Te 2.7 Se 0.3 Stoichiometric ratio ingredients;
[0043] Put the above-mentioned raw materials into a quartz glass tube or a high borosilicate glass tube and vacuum seal it, then put the sealed quartz glass tube or high borosilicate glass tube into a swing furnace for high-temperature melting, the melting temperature is 630°C, and the melting time is 5min. After the smelting is completed, the hearth of the swing furnace is rotated to a vertical position, and slowly cooled to obtain a high-density n-type bismuth telluride-based alloy ingot;
[0044] Cut the obtained n-type bismuth telluride-based alloy crystal bar into blocks, put the blocks into an equal-channel corner extrusio...
Embodiment 3
[0052] The preparation method of the preferred orientation n-type bismuth telluride-based polycrystalline bulk thermoelectric material provided in this example is as follows:
[0053] Using Bi, Te and Se elemental powders with a mass percentage greater than 99.99% as raw materials, according to Bi 2 Te 2.4 Se 0.6 Stoichiometric ratio ingredients;
[0054] Put the above-mentioned raw materials into a quartz glass tube or a high borosilicate glass tube and vacuum seal it, then put the sealed quartz glass tube or high borosilicate glass tube into a swing furnace for high-temperature melting, the melting temperature is 630°C, and the melting time is 10min. After the smelting is completed, the hearth of the swing furnace is rotated to a vertical position, and slowly cooled to obtain a high-density n-type bismuth telluride-based alloy ingot;
[0055] Cut the obtained n-type bismuth telluride-based alloy crystal bar into blocks, put the blocks into an equal-channel corner extrusi...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com