Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation of indium oxide/indium sulfide heterojunction semiconductor material and use of photocatalyst and solar nitrogen fixation application

A technology of photocatalyst and indium oxide, which is applied in the field of photocatalytic materials, can solve the problems of broken semiconductor catalyst quantum efficiency, low recycling rate, and reduced nitrogen fixation efficiency, and achieve good solar nitrogen fixation performance and high quantum efficiency.

Inactive Publication Date: 2019-07-12
DALIAN POLYTECHNIC UNIVERSITY
View PDF4 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still many problems in the application of photocatalysts in the field of nitrogen fixation, such as the existence of competing reactions such as water splitting, which reduces the efficiency of nitrogen fixation, whether photogenerated electrons can break the highly stable N≡N, and the quantum efficiency of semiconductor catalysts is low, and the recycling rate is low. Wait

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of indium oxide/indium sulfide heterojunction semiconductor material and use of photocatalyst and solar nitrogen fixation application
  • Preparation of indium oxide/indium sulfide heterojunction semiconductor material and use of photocatalyst and solar nitrogen fixation application
  • Preparation of indium oxide/indium sulfide heterojunction semiconductor material and use of photocatalyst and solar nitrogen fixation application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Add 0.2736g of indium chloride tetrahydrate, 0.7627g of sodium lauryl sulfate and 0.2803g of urea into 80mL of aqueous solution, stir thoroughly for 60min to obtain a clear solution, and then transfer the above obtained solution to a 1-2 MPa high-pressure reactor, Carry out constant temperature hydrothermal reaction at 120°C for 12h, cool the product to room temperature, centrifuge and wash 6 times with water and ethanol solution respectively, collect the powder after drying at 60°C, put the obtained product in a muffle furnace, and calcinate at 500°C for 2h . Add 0.1g of the calcined product to 32mL of water, add 0.05g of thioacetamide to the mixed solution after ultrasonication for 30min, stir for 30min, put it into a 1-2MPa autoclave, and conduct a constant temperature hydrothermal reaction at 150°C for 5h. The product was cooled to room temperature, centrifuged and washed 6 times with water and ethanol solution respectively, and dried at 60°C to collect the powder t...

Embodiment 2

[0060] Add 0.2736g of indium chloride tetrahydrate, 0.7627g of sodium lauryl sulfate and 0.2803g of urea into 80mL of aqueous solution, stir thoroughly for 60min to obtain a clear solution, and then transfer the above obtained solution to a 1-2 MPa high-pressure reactor, Carry out constant temperature hydrothermal reaction at 120°C for 12h, cool the product to room temperature, centrifuge and wash 6 times with water and ethanol solution respectively, collect the powder after drying at 60°C, put the obtained product into a muffle furnace, and perform calcination at 500°C 2h. Add 0.1g of the calcined product to 32mL of water, add 0.03g of thioacetamide to the mixed solution after ultrasonication for 30min, stir for 30min, put it into a 1-2MPa autoclave, and conduct a constant temperature hydrothermal reaction at 150°C for 5h. The product was cooled to room temperature, centrifuged and washed 6 times with water and ethanol solution respectively, and dried at 60°C to collect the p...

Embodiment 3

[0062] Add 0.2736g of indium chloride tetrahydrate, 0.7627g of sodium lauryl sulfate and 0.2803g of urea into 80mL of aqueous solution, stir thoroughly for 60min to obtain a clear solution, and then transfer the above obtained solution to a 1-2 MPa high-pressure reactor, Carry out constant temperature hydrothermal reaction at 120°C for 12h, cool the product to room temperature, centrifuge and wash 6 times with water and ethanol solution respectively, collect powder after drying at 60°C, put the obtained product into a muffle furnace, and perform calcination at 500°C 2h. Add 0.1g of the calcined product to 32mL of water, add 0.04g of thioacetamide to the mixed solution after ultrasonication for 30min, stir for 30min, put it into a 1-2MPa autoclave, and conduct a constant temperature hydrothermal reaction at 150°C for 5h. The product was cooled to room temperature, centrifuged and washed 6 times with water and ethanol solution respectively, and dried at 60°C to collect the powde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photocatalyst. The photocatalyst is the indium oxide / indium sulfide heterojunction semiconductor material with a molecular formula of In2O3 / In2S3 for solar nitrogen fixation.The preparation method of the catalyst comprises the steps of 1, using water or an organic solvent as a solvent; 2, dissolving an indium salt compound, a surfactant and a weakly basic substance in the solvent; 3, placing in a reaction kettle to perform a hydrothermal reaction; 4, cooling to the room temperature, centrifuging and alternately washing with water and ethanol solution, and drying to obtain indium hydroxide; 5, calcining the indium hydroxide in a muffle furnace to obtain indium oxide; 6, placing the indium oxide in the solvent, stirring and conducting ultrasonic treatment; 7, adding a sulfur source, and stirring; 8, placing into the reaction kettle for a secondary hydrothermal reaction; 9, cooling to the room temperature for centrifugation separation and alternately washing with the water and ethanol solution, and drying to obtain the indium oxide / indium sulfide heterojunction semiconductor material. The photocatalyst is economical, environmentally friendly and recyclable, can be mass-produced, and has solar nitrogen fixation performance.

Description

technical field [0001] The invention relates to the technical field of photocatalytic materials, more specifically, to an indium oxide / indium sulfide heterojunction semiconductor material (In 2 o 3 / In 2 S 3 ) preparation of photocatalyst and application of solar nitrogen fixation. Background technique [0002] In the atmosphere, nitrogen has the highest content, and its volume accounts for about 78% of the total volume of the atmosphere. For such abundant nitrogen resources, how to convert stable nitrogen into ammonia and make better use of it has become the focus of attention. At present, the use of the Haber-Bosch method to convert nitrogen into ammonia has greatly promoted the process of industrial nitrogen fixation, but the Haber-Bosch method needs to be carried out under harsh reaction conditions such as high temperature (300-550°C) and high pressure (15-25MPa). , this reaction not only consumes a large amount of energy, but also produces a greenhouse effect. Ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J35/02C01C1/04C05C3/00
CPCB01J27/04C01C1/04C05C3/00B01J35/00B01J35/30B01J35/39Y02P20/52
Inventor 董晓丽许惠畅王宇郑楠马红超张秀芳
Owner DALIAN POLYTECHNIC UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com