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Arc ion plating with combination of magnetic field and lining tapered tube and straight tube composite filtration

An arc ion plating and arc plasma technology, which is applied in the field of material surface treatment, can solve the problems of uniform ablation of targets, large particle defects, and restrictions on the use of target elements, so as to achieve effective control, ensure uniformity, and improve utilization. The effect of efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-stage magnetic field filtering method and the shape constraints of the lined bias conical tube and straight tube combination device and the complex effect of bias electric field attraction to eliminate the contamination of film components caused by secondary sputtering At the same time, ensure that the arc plasma passes through the combination device of the lined bias conical tube and the straight tube and the multi-stage magnetic field filter device with high transmission efficiency, and then use the movable coil device to control the flow from the multi-stage magnetic field device and the inner liner. The transmission direction of the arc plasma transmitted by the combination device of the biased conical tube and the straight tube in the vacuum chamber can realize the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcome the problems caused by the vacuum chamber space and the target The problem of uneven film deposition caused by the limitation of the deposition position caused by the source layout design or the limitation of the shape of the substrate may completely eliminate the arc plasma transmitted from the multi-level magnetic field device and the combination device of the lined bias conical tube and straight tube. Residual large particle defects enable the surface of the workpiece to adjust the ion energy under the condition of applying a negative bias voltage to prepare a continuous and dense high-quality film, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, and improve The transmission efficiency of arc plasma, increasing the deposition rate of thin films and reducing or even eliminating the adverse effects of large particle defects on thin film microstructure, continuous dense deposition and service performance, proposed a combination of magnetic field and lined conical tube and straight tube composite filtered arc ion plating

Method used

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  • Arc ion plating with combination of magnetic field and lining tapered tube and straight tube composite filtration
  • Arc ion plating with combination of magnetic field and lining tapered tube and straight tube composite filtration
  • Arc ion plating with combination of magnetic field and lining tapered tube and straight tube composite filtration

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate this embodiment. The device used in the arc ion plating combined magnetic field and lined tapered tube and straight tube composite filter in this embodiment includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), liner bias conical tube and straight tube combination device (6), liner bias power supply (7), movable coil device (8 ), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the combination device of the lined bias conical tube and the straight tube (6), and the movable co...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating lined with conical tube and straight tube composite filter, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), liner bias conical tube and straight tube combination device (6) keep the DC positive bias, turn on the bias power supply (1) , turn on the power supply of the movable coil device (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare multilayer structures with different stress states, microstructures and element ratios Thin film, others are the same as Embodiment 2.

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Abstract

The invention provides arc ion plating with combination of the magnetic field and lining tapered tube and straight tube composite filtration, and belongs to the technical field of material surface treatment in order to solve the problems of thin film pollution caused by large particles in a multistage magnetic field filtration device and loss in a plasma transfer process. A device for the arc ionplating comprises a bias power supply, an arc ion plating target source, an arc ion plating target source power supply, a multistage magnetic field device, a multistage magnetic field power supply, alining bias tapered tube and straight tube combination device, a lining bias power supply, a movable coil device, a movable coil device power supply, a sample table, a bias power supply waveform oscilloscope and a vacuum chamber. Thin film deposition comprises steps that devices are connected, a system is started, when vacuum degree in a vacuum chamber is lower than 10<-4> Pa, working gas is introduced, the plating power supply and the bias power supply are started to adjust energy of arc plasma, large particles in the arc plasma are eliminated by the lining bias tapered tube and straight tubecombination device and the multistage magnetic field device, transmission efficiency of the large particles in the filtration device is improved, loss in the vacuum chamber is reduced, and parametersare set for preparation of a thin film.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and an inner-lined conical tube and a straight tube compound filter, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large parti...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/56
CPCC23C14/325C23C14/564
Inventor 魏永强王好平侯军兴张华阳刘源蒋志强
Owner 魏永强
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