Arc ion plating with combination of magnetic field and lining tapered tube and straight tube composite filtration
An arc ion plating and arc plasma technology, which is applied in the field of material surface treatment, can solve the problems of uniform ablation of targets, large particle defects, and restrictions on the use of target elements, so as to achieve effective control, ensure uniformity, and improve utilization. The effect of efficiency
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specific Embodiment approach 1
[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate this embodiment. The device used in the arc ion plating combined magnetic field and lined tapered tube and straight tube composite filter in this embodiment includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), liner bias conical tube and straight tube combination device (6), liner bias power supply (7), movable coil device (8 ), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);
[0021] In this device:
[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the combination device of the lined bias conical tube and the straight tube (6), and the movable co...
specific Embodiment approach 2
[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating lined with conical tube and straight tube composite filter, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), liner bias conical tube and straight tube combination device (6) keep the DC positive bias, turn on the bias power supply (1) , turn on the power supply of the movable coil device (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare multilayer structures with different stress states, microstructures and element ratios Thin film, others are the same as Embodiment 2.
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