Vacuum coating method combining composite magnetic field and lined bias voltage stepped tube

Abstract

The invention discloses a vacuum coating method combining a composite magnetic field and a lined bias voltage stepped tube, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, the loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a bias voltage power source, an arc ion plating target source and power source, a multistage magnetic field device and power source, a lining bias voltage stepped tube device and bias voltage power source, a moving coil device and power source, a waveform matching device, a twin target high power pulse magnetron sputtering target source andpower source, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a coating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and the movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method in which a combined magnetic field is compounded with a liner bias stepped tube, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit ...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias stepped tube device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the lined bias stepped tube with high transmission efficiency device and multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the Large particle defects, while using the movable coil device to control the transmission direction of the composite plasma of twin target high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, to achieve film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber The control adjustment can reduce the loss of compound plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the shape of the substrate, and completely eliminate the multi-level magnetic field device and the lined bias stepped tube device. Large particle defects may remain in the arc plasma transmitted from the medium, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage, and the large particle defects in the arc plasma can be removed by using the suppression effect of the bias electric field on the surface of the substrate , to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of plasma, increase the deposition speed of the film, and reduce or even eliminate the impact of large particle defects on the film The adverse effects of microstructure, continuous dense deposition and service performance, a vacuum coating method combined with magnetic field and lined bias stepped tube was proposed

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