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Composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating

An arc ion plating and arc plasma technology, which is applied in the field of material surface treatment, can solve the problems of pollution, uniform ablation of the target material, large particle defects, etc., to ensure the uniformity, improve the utilization efficiency, and achieve the effect of effective control

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-stage magnetic field filtering method and the mechanical shielding of the lined bias tapered tube device's own shape constraints and the combined effect of bias electric field attraction to eliminate the large-scale particles contained in the arc plasma Particle defects, while ensuring that the arc plasma passes through the lined bias conical tube device and the multi-stage magnetic field filter device with high transmission efficiency, and then uses the movable coil device to control the transmission from the multi-stage magnetic field device and the lined bias conical tube device The transmission direction of the transmitted arc plasma in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcomes the limitation of the deposition position or the substrate caused by the layout design of the vacuum chamber space and the target source. The problem of uneven film deposition caused by shape restrictions can completely remove the large particle defects that may remain in the arc plasma transmitted from the multi-stage magnetic field device and the lined bias conical tube device, so that the surface of the workpiece is negatively biased Adjust the ion energy under certain conditions, prepare continuous, dense and high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of arc plasma, increase the deposition speed of the film and reduce Even to eliminate the adverse effects of large particle defects on the film microstructure, continuous dense deposition and service performance, a combined magnetic field and lined bias conical tube composite filtering arc ion plating is proposed

Method used

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  • Composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating
  • Composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating
  • Composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment, the present embodiment combines the magnetic field and the arc ion plating of the liner bias conical tube compound filter to use the device including the bias power supply (1), the arc power supply (2), the arc ion plating target source ( 3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), lined bias conical tube device (6), lined bias power supply (7), movable coil device (8), movable coil device Power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the lined bias conical tube device (6), the movable coil device (8) and the vacuum chamber ( 13) are insulated from each ...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating of the compound type filter of the lined bias conical tube, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply ( 5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), the liner bias conical tube device (6) maintains a positive DC bias, turn on the bias power supply (1), and turn on the movable coil device The power supply (9) adjusts the movable coil device (8), adjusts the output resistance of the rheostat device (10), adjusts the process parameters, conducts film deposition, and prepares multi-layer structure films with different stress states, microstructures and element ratios, and other related implementation Method 2 is the same.

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PUM

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Abstract

The invention relates to composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating, and belongs to the technical field of material surface treatment. According to composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating, the problems ofcontamination of thin films by large particles in a multistage magnetic field filtering device, and loss in the process of plasma transferring are solved. According to composite magnetic field and lining bias voltage tapered tube composite type filtered arc ion plating, a device comprises a grid bias power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, a lining bias voltage tapered tube device and grid biaspower supply, a movable coil device and power supply, a sample table, a grid bias power supply kymographion and a vacuum cavity; thin film deposition comprises the steps that devices are connected, the system is started, when the vacuum degree of the vacuum cavity is smaller than 10-4 Pa, a working gas is introduced, a film plating power supply is opened, energy of an arc plasma is adjusted by using the grid bias power supply, through the lining bias voltage tapered tube device and the multistage magnetic field device, the large particle defect in the arc plasma is eliminated, and the transportation efficiency of the filtering device is improved, loss in the vacuum cavity is reduced, technology parameters are set, and film preparation is conducted.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and a lining bias conical tube for composite filtering, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/564C23C14/352C23C14/3485
Inventor 魏永强王好平侯军兴刘源蒋志强
Owner 魏永强
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