Deep ultraviolet photodetector for solar blind area based on organic field effect transistor

Abstract

The invention discloses a deep ultraviolet photodetector for a solar blind area based on an organic field effect transistor. An organic field effect transistor semiconductor layer of the deep ultraviolet photodetector is formed by block conjugated polymer nanowires; a block copolymer semiconductor material and a polymer insulating material are respectively dissolved in a solvent and then are mixedto form a blended solution; and block copolymer semiconductor nanowires with different densities are obtained by controlling a mass ratio of the block copolymer semiconductor material to the polymerinsulating material. The block copolymer semiconductor nanowires disclosed by the invention are used as the semiconductor layer of the photodetector based on the organic field effect transistor, so that the optical response to a deep ultraviolet region can be enhanced. According to the deep ultraviolet photodetector, a conjugated polymer is used for responding to deep ultraviolet light of the solar blind area for the first time, and the high-performance deep ultraviolet photodetector for the solar blind area based on the organic field effect transistor is prepared; good light selectivity and light responsiveness are achieved in the deep ultraviolet region, the light response reaches 120 A / W, and the external quantum efficiency is up to 50000%.

Description

technical field [0001] The invention relates to the field of deep ultraviolet photoelectric detectors in sun-blind areas, in particular to a sun-blind area deep-ultraviolet photodetector based on organic field effect transistors. Background technique [0002] The sun-blind spectral region (200-280nm) is defined by a specific band of light that cannot penetrate the atmosphere and reach the Earth's surface. The sun-blind zone deep ultraviolet photoelectric detector equipment has broad application prospects in military surveillance, target detection and acquisition, missile launch detection, remote control, chemical analysis, flame detection, etc. Deep ultraviolet photodetectors are highly responsive to the deep ultraviolet region and are not interfered by ambient visible light or long-wavelength ultraviolet light, which is crucial for tracking the ozone layer hole in the atmosphere. In addition, deep-UV photodetectors have great potential in biological and medical analysis, b...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a solar blind zone deep ultraviolet light detector based on organic field effect transistors, to solve the problem that the rigidity of deep ultraviolet light detectors in the prior art limits its application in flexible devices

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