Method for preparing doped graphene with doped graphene quantum dot as nucleation dot

Abstract

The invention discloses a method for preparing doped graphene with a doped graphene quantum dot as a nucleation dot. The method comprises the following steps that a copper foil substrate is prepared,cleaned, dried, annealed and cooled in sequence and then preserved for use; the doped graphene quantum dot is prepared, the surface of the copper foil substrate is subjected to spin coating with the doped graphene quantum dot, and natural drying is conducted; the copper foil substrate is placed in a CVD heat furnace, under the atmosphere of argon and hydrogen, methane is introduced to the heat furnace and decomposed under the condition of 1,000 DEG C, and with the doped graphene quantum dot as the nucleation dot, epitaxial growth is conducted for forming the doped graphene; the surface of thedoped graphene is subjected to spin coating with an organic solution of PMMA; the surface of the doped graphene is dried, and an organic solvent of the surface of the doped graphene is volatilized forforming a PMMA protection layer; a sample is soaked in an ammonium persulfate solution, the copper foil substrate is corroded, and then the sample is taken out and washed through ionized water; the sample is transferred to a target substrate through filtering paper, and roasting is conducted, so that the doped graphene is bonded to the target substrate; the sample is transferred to an acetone solution for dissolving the PMMA protection layer.

Description

【Technical field】 [0001] The invention relates to a method for preparing doped graphene by using doped graphene quantum dots as nucleation points, and belongs to the field of graphene production. 【Background technique】 [0002] Graphene is a two-dimensional nanomaterial with sp 2 Honeycomb hexagonal lattice structure composed of hybrid carbon atoms. Its unique structure endows it with excellent thermal, mechanical, and electrical properties, enabling various potential applications such as thermal interface materials, ultra-thin protective coatings, high-frequency field-effect transistors, and printed circuits. However, the application of intrinsic graphene in the field of electronics is limited by its zero-bandgap property, and it is especially important to obtain graphene with an adjustable bandgap within a certain range. So far, one of the most effective ways to open the band gap is to dope atoms such as nitrogen (N) and boron (B) with heterogeneous atoms, so that n-type...

AI Technical Summary

Problems solved by technology

However, the existing doping process has the disadvantages of low doping concentration, uncontrollable concentration, complex process, high cost, and easy to cause environmental pollution, which limits the industrial application of doped graphene.

Images