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A kind of preparation method of bismuth-doped tin-lanthanum gallate yellow phosphor powder for algan chip

The technology of yellow phosphor and lanthanum gallate is applied in the field of preparation of bismuth-doped lanthanum tin gallate yellow phosphor, which can solve the problems of increased packaging difficulty, strong scattering, environmental damage, etc., and achieves low price, simple preparation process, Avoid overlapping effects

Active Publication Date: 2021-12-24
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, due to the use of the phosphor adhesive layer, there are a large number of discretely distributed phosphor particles in the phosphor adhesive layer, and strong scattering will occur when the light is incident on the phosphor adhesive layer.
On the one hand, this kind of scattering strengthens the absorption of light by the phosphor adhesive layer, and on the other hand, it also causes a large amount of light to be reflected, reducing the light transmittance of the LED chip.
[0004] Moreover, currently white LED phosphors are mainly concentrated in rare earth doped phosphors. Due to the characteristics of rare earth ions, it will face problems such as reabsorption of visible light, expensive rare earths, and harsh synthesis conditions for some phosphors. Moreover, the mining and refining process of rare earths has a great impact on Great damage and pollution to the environment
[0005] At present, there are still a variety of chips mixed, such as blue chips, red chips and green chips mixed packaging, so that the LED emits white light, but the mixing of multiple chips increases the difficulty of packaging, and the reliability is poor

Method used

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  • A kind of preparation method of bismuth-doped tin-lanthanum gallate yellow phosphor powder for algan chip
  • A kind of preparation method of bismuth-doped tin-lanthanum gallate yellow phosphor powder for algan chip
  • A kind of preparation method of bismuth-doped tin-lanthanum gallate yellow phosphor powder for algan chip

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Effect test

Embodiment 1

[0029] A method for preparing bismuth-doped lanthanum tin gallate yellow phosphor for AlGaN chips, specifically comprising the following steps:

[0030] S1), according to the molar ratio of elements La:Sn:Ga:Bi=2.997:1:5:0.003, that is, x=0.1%, respectively take lanthanum oxide, tin oxide, gallium oxide and bismuth trioxide as raw materials, the mixture 3g;

[0031] S2), grind and mix the compound in step S1) and put it into a jade crucible, then put the crucible into a high-temperature electric furnace, and pre-fire it in an air atmosphere for 4 hours, and the pre-fire temperature is 800°C;

[0032] S3), take out the pre-fired sample in step S2), grind and mix it evenly, put it into a crucible and burn it under air atmosphere for 7 hours, the burning temperature is 1400°C;

[0033] S4), taking out the burned sample in step S3) and cooling it naturally, grinding and mixing to obtain yellow fluorescent powder La 3 SnGa 5 o 14 : Bi 3+ .

Embodiment 2

[0035] A method for preparing bismuth-doped lanthanum tin gallate yellow phosphor for AlGaN chips, specifically comprising the following steps:

[0036] S1), according to the element molar ratio is La: Sn: Ga: Bi=2.991:1:5:0.009, that is, x=0.3%, respectively take lanthanum oxide, tin oxide, gallium oxide and bismuth nitrate as raw materials, the mixture is 3g;

[0037] S2), grind and mix the compound in step S1) and put it into a jade crucible, then put the crucible into a high-temperature electric furnace, and pre-fire it in an air atmosphere for 6 hours, and the pre-fire temperature is 700°C;

[0038] S3), take out the pre-fired sample in step S2), grind and mix it evenly, put it into a crucible and burn it under air atmosphere for 6 hours, the burning temperature is 1450°C;

[0039] S4), taking out the burned sample in step S3) and cooling it naturally, grinding and mixing to obtain yellow fluorescent powder La 3 SnGa 5 o 14 : Bi 3+ .

Embodiment 3

[0041] A method for preparing bismuth-doped lanthanum tin gallate yellow phosphor for AlGaN chips, specifically comprising the following steps:

[0042] S1), according to the molar ratio of elements La:Sn:Ga:Bi=2.985:1:5:0.015, i.e. x=0.5%, respectively take lanthanum oxide, tin oxide, gallium oxide and bismuth trioxide as raw materials, the mixture 3g;

[0043] S2), grind and mix the compound in step S1) and put it into a jade crucible, then put the crucible into a high-temperature electric furnace, and pre-fire it in an air atmosphere for 7 hours, and the pre-fire temperature is 700°C;

[0044] S3), take out the pre-fired sample in step S2), grind and mix it evenly, put it into a crucible and burn it under air atmosphere for 7 hours, the burning temperature is 1400°C;

[0045] S4), taking out the burned sample in step S3) and cooling it naturally, grinding and mixing to obtain yellow fluorescent powder La 3 SnGa 5 o 14 : Bi 3+ .

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Abstract

The invention provides a method for preparing bismuth-doped lanthanum tin gallate yellow phosphor for AlGaN chips, and a method for preparing bismuth-doped lanthanum tin gallate yellow phosphor for AlGaN chips. The compound is used as a raw material, after being ground and mixed, it is pre-fired in the air atmosphere, taken out, ground and mixed, and burned in the air atmosphere to obtain the yellow phosphor La 3 SnGa 5 o 14 : Bi 3+ , the present invention does not use rare earth as the luminescent center, and uses cheap bismuth as the activator; the present invention has ultra-broadband emission covering the interval of 330nm to 800nm ​​under the excitation of ultraviolet light, and the half maximum width is 300nm; in addition, the preparation process of the present invention is simple , does not use harsh preparation conditions, such as high temperature and high pressure, can be prepared under normal pressure, and is easy to scale production; and the excitation band is located in the ultraviolet region, avoiding the overlap with the excitation light, and there is no reabsorption problem.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a method for preparing bismuth-doped tin-lanthanum gallate yellow fluorescent powder for AlGaN chips. Background technique [0002] Luminescent material is a solid-state semiconductor device that can convert electrical energy into visible light. It is widely used in display screens, traffic signals, display light sources, automotive lights, LED backlight sources, lighting sources, and other fields. White LED lighting technology has the advantages of high efficiency, energy saving, compactness and durability, and its popularization will significantly reduce energy consumption. [0003] There are usually three ways to realize white light LED: one is to use red, green and blue LED chips to directly mix to produce white light; the other is to use blue LED chips and Y 3 Al 5 o 12 : Ce 3+ The combination of yellow phosphors realizes white light; the third is to use ul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/80H01L33/50
Inventor 彭明营刘怀陆
Owner WUYI UNIV
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