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Lead halide perovskite poly-silicon thin piece and fabrication method thereof

A technology of perovskite and flakes, applied in the field of lead halide perovskite polycrystalline flakes and its preparation, which can solve the problems of inability to apply thick film preparation and waste of raw materials

Pending Publication Date: 2019-05-10
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, large-area perovskite films are usually prepared by scraping and printing methods. This method can obtain thinner perovskite films, but it cannot be applied to the preparation of thick films (thin sheets)
Thicker perovskite materials can be obtained by growing large-sized crystals, but the cutting and solution growth process will cause huge waste of raw materials

Method used

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  • Lead halide perovskite poly-silicon thin piece and fabrication method thereof
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  • Lead halide perovskite poly-silicon thin piece and fabrication method thereof

Examples

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Effect test

Embodiment 1

[0048] Weigh PbI with a molar ratio of 1:1 2 and CH 2 NH 3 The powder of I is ground by agate to mix the two; put the mixed raw materials into a square mold, apply a pressure of 0.1MPa, and simultaneously heat the mold to 100°C for 60min, and press the raw materials into flakes to obtain more The precursor of the perovskite flake, after the reaction is completed and the mold is cooled, the sample is taken out to obtain a perovskite polycrystalline flake with a thickness of 10 μm.

Embodiment 2

[0050] Weigh CsBr and PbBr with a molar ratio of 1:1 2 Grind the powder with a glass mortar to mix the two; put the mixed raw materials into a circular mold, apply a pressure of 0.5MPa, and heat the mold to 120°C for 55 minutes, and press the raw materials into flakes. The precursor of the polycrystalline flake was obtained, and after the reaction was completed and the mold was cooled, the sample was taken out to obtain a perovskite polycrystalline flake with a thickness of 100 μm.

Embodiment 3

[0052] Weigh CsCl and PbCl with a molar ratio of 1:1 2 Grind the powder with a ceramic mortar to mix the two; put the mixed raw materials into a triangular mold, apply a pressure of 1 MPa, and heat the mold to 130°C for 50 minutes, and press the raw materials into flakes to obtain multiple The precursor of the crystal flake, after the reaction is completed and the mold is cooled, the sample is taken out to obtain a perovskite polycrystalline flake with a thickness of 200 μm.

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Abstract

The invention discloses a lead halide perovskite poly-silicon thin piece and a fabrication method thereof. According to the method, precursor powder is fully reacted by in-situ hot pressing, raw material utilization rate can be achieved by 100%, and raw material waste is prevented. By the method, heating is performed as well as pressurizing is performed, and the increased steps caused by first pressurizing and then heating are prevented; the method is suitable for preparing the lead halide perovskite poly-silicon thin piece, the precursor reaction raw material is easy to volatilize, reaction is performed in a closed environment by die design, and the proportion of a reaction product and the thicknesses of the generated perovskite thin film can be accurately controlled; by the method, the perovskite crystal thin film is synthesized under a low temperature, the production cost is reduced, and material preparation can be performed according to the thickness of a target thin piece; and thepoly-silicon thin film obtained by the method has carrier mobility and carrier collection efficiency equivalent to those of a single-crystal material and can be used for fabricating a high-quality perovskite photoelectric device.

Description

【Technical field】 [0001] The invention belongs to the field of perovskite material preparation, and in particular relates to a lead halide perovskite polycrystalline thin slice and a preparation method thereof. 【Background technique】 [0002] Lead halide perovskite materials have excellent photoelectric properties and are widely used in solar cells, LEDs, lasers, ray detectors and other devices. At present, the efficiency of perovskite solar cells is as high as 23.7%, and the quantum efficiency of perovskite luminescent quantum dots is close to its theoretical limit, reaching 22%, showing its good application prospects. However, the results of high-performance devices reported so far are all small-area devices. In order to further realize the large-scale application of perovskite materials, the development of preparation technologies for large-area perovskite materials has become a problem that needs to be solved in current research. At the same time, the performance of the...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCY02E10/549
Inventor 刘生忠杨周胡明昕刘渝城曹舒晴莫莉红储德鹏苏晗
Owner SHAANXI NORMAL UNIV
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